De haas-van alphen effect under pressure in UGe2

Rikio Settai, Yoshinori Haga, Miho Nakashima, Shugo Ikeda, Tomoyuki Okubo, Shingo Araki, Yoshichika Ōnuki

Research output: Contribution to journalArticle

Abstract

The electronic state in UGe2has been studied via the de Haas-van Alphen (dHvA) effect under hydrostatic pressure. The dHvA oscillation has been observed not only in the strongly polarized state (p < p* c) but also in the weakly polarized (p* c < p < pc)and paramagnetic states (p > pc). The observed Fermi surface, mass enhancement and scattering mechanism are highly different in these states.

Original languageEnglish
Pages (from-to)94-97
Number of pages4
JournalJournal of Nuclear Science and Technology
Volume39
DOIs
Publication statusPublished - 2002
Externally publishedYes

Fingerprint

Fermi surface
Electronic states
Hydrostatic pressure
trucks
hydrostatic pressure
Fermi surfaces
Scattering
oscillations
augmentation
scattering
electronics

Keywords

  • De Haas-van Alphen effect
  • Fermi surface
  • Ferromagnetism
  • High pressure
  • Superconductivity
  • UGe

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering

Cite this

De haas-van alphen effect under pressure in UGe2 . / Settai, Rikio; Haga, Yoshinori; Nakashima, Miho; Ikeda, Shugo; Okubo, Tomoyuki; Araki, Shingo; Ōnuki, Yoshichika.

In: Journal of Nuclear Science and Technology, Vol. 39, 2002, p. 94-97.

Research output: Contribution to journalArticle

Settai, Rikio ; Haga, Yoshinori ; Nakashima, Miho ; Ikeda, Shugo ; Okubo, Tomoyuki ; Araki, Shingo ; Ōnuki, Yoshichika. / De haas-van alphen effect under pressure in UGe2 In: Journal of Nuclear Science and Technology. 2002 ; Vol. 39. pp. 94-97.
@article{da49c6d1b78d4c15941824743273a7c5,
title = "De haas-van alphen effect under pressure in UGe2",
abstract = "The electronic state in UGe2has been studied via the de Haas-van Alphen (dHvA) effect under hydrostatic pressure. The dHvA oscillation has been observed not only in the strongly polarized state (p < p* c) but also in the weakly polarized (p* c < p < pc)and paramagnetic states (p > pc). The observed Fermi surface, mass enhancement and scattering mechanism are highly different in these states.",
keywords = "De Haas-van Alphen effect, Fermi surface, Ferromagnetism, High pressure, Superconductivity, UGe",
author = "Rikio Settai and Yoshinori Haga and Miho Nakashima and Shugo Ikeda and Tomoyuki Okubo and Shingo Araki and Yoshichika Ōnuki",
year = "2002",
doi = "10.1080/00223131.2002.10875416",
language = "English",
volume = "39",
pages = "94--97",
journal = "Journal of Nuclear Science and Technology",
issn = "0022-3131",
publisher = "Atomic Energy Society of Japan",

}

TY - JOUR

T1 - De haas-van alphen effect under pressure in UGe2

AU - Settai, Rikio

AU - Haga, Yoshinori

AU - Nakashima, Miho

AU - Ikeda, Shugo

AU - Okubo, Tomoyuki

AU - Araki, Shingo

AU - Ōnuki, Yoshichika

PY - 2002

Y1 - 2002

N2 - The electronic state in UGe2has been studied via the de Haas-van Alphen (dHvA) effect under hydrostatic pressure. The dHvA oscillation has been observed not only in the strongly polarized state (p < p* c) but also in the weakly polarized (p* c < p < pc)and paramagnetic states (p > pc). The observed Fermi surface, mass enhancement and scattering mechanism are highly different in these states.

AB - The electronic state in UGe2has been studied via the de Haas-van Alphen (dHvA) effect under hydrostatic pressure. The dHvA oscillation has been observed not only in the strongly polarized state (p < p* c) but also in the weakly polarized (p* c < p < pc)and paramagnetic states (p > pc). The observed Fermi surface, mass enhancement and scattering mechanism are highly different in these states.

KW - De Haas-van Alphen effect

KW - Fermi surface

KW - Ferromagnetism

KW - High pressure

KW - Superconductivity

KW - UGe

UR - http://www.scopus.com/inward/record.url?scp=85010606897&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85010606897&partnerID=8YFLogxK

U2 - 10.1080/00223131.2002.10875416

DO - 10.1080/00223131.2002.10875416

M3 - Article

AN - SCOPUS:85010606897

VL - 39

SP - 94

EP - 97

JO - Journal of Nuclear Science and Technology

JF - Journal of Nuclear Science and Technology

SN - 0022-3131

ER -