De Haas-van Alphen effect on PrRu4Sb12

Tatsuma D. Matsuda, Keisuke Abe, Fumihito Watanuki, Hitoshi Sugawara, Yuji Aoki, Hideyuki Sato, Yoshihiko Inada, Rikio Settai, Yoshichika Onuki

Research output: Contribution to journalConference article

19 Citations (Scopus)

Abstract

The angular dependence of de Haas-van Alphen effect has been measured to reveal the electronic structure of filled skutterudite PrRu4Sb12. The angular dependence of de Haas-van Alphen frequency of PrRu4Sb12 is in good agreement with that of LaRu4Sb12. Compared with PrFe4P12, no anomalous enhancement of cyclotron effective mass has been observed in this system. This change of electronic structure is attributed to the difference in the c - f hybridization strength, which is expected from the large difference in the lattice parameters.

Original languageEnglish
Pages (from-to)832-833
Number of pages2
JournalPhysica B: Condensed Matter
Volume312-313
DOIs
Publication statusPublished - Mar 1 2002
Externally publishedYes
EventInternational Conference on Strongly Correlated Electrons - Ann Arbor, MI, United States
Duration: Aug 6 2002Aug 6 2002

Keywords

  • De Haas-van Alphen effect
  • Fermi surface
  • Filled skutterudite

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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  • Cite this

    Matsuda, T. D., Abe, K., Watanuki, F., Sugawara, H., Aoki, Y., Sato, H., Inada, Y., Settai, R., & Onuki, Y. (2002). De Haas-van Alphen effect on PrRu4Sb12. Physica B: Condensed Matter, 312-313, 832-833. https://doi.org/10.1016/S0921-4526(01)01260-1