De Haas-van Alphen effect in LaRu4P12

S. R. Saha, H. Sugawara, R. Sakai, Y. Aoki, H. Sato, Y. Inada, H. Shishido, R. Settai, Y. Onuki, H. Harima

Research output: Contribution to journalConference article

14 Citations (Scopus)

Abstract

We report the first successful observation of the de Haas-van Alphen effect in the filled skutterudite LaRu4P12. Observed Fermi surfaces (FSs) are close to those expected from the band calculation. The effective mass mc* is roughly twice compared to the calculated band mass. Assuming the similarity of FS between LaRu4P12 and PrRu4P12, the FS nesting with q = (1, 0, 0) as a possible origin of the M-I transition in PrRu4P12 is discussed.

Original languageEnglish
Pages (from-to)68-70
Number of pages3
JournalPhysica B: Condensed Matter
Volume328
Issue number1-2
DOIs
Publication statusPublished - Apr 1 2003
Externally publishedYes
EventT2PAM - Higashi-Hiroshima, Japan
Duration: Aug 16 2002Aug 19 2002

Keywords

  • De Haas-van Alphen effect
  • Filled skutterudite
  • LaRuP
  • Metal-insulator transition
  • PrRuP

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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