De Haas-van Alphen effect in CeRh2Si2 under pressure

S. Araki, M. Nakashima, H. Nakawaki, R. Settai, H. Harima, Y. Onuki

Research output: Contribution to journalConference articlepeer-review


We observed de Haas-van Alphen (dHvA) oscillations in CeRh2Si2 at 1.3 GPa, higher than the quantum critical pressure pc≃1.0 GPa. Three observed dHvA branches correspond to the result of the 4f-itinerant model. Their cyclotron masses are large, being 24m0, 29m0 and 31m0, about 4 times larger than the corresponding band masses.

Original languageEnglish
Pages (from-to)435-436
Number of pages2
JournalPhysica B: Condensed Matter
Publication statusPublished - Mar 2002
Externally publishedYes
EventInternational Conference on Strongly Correlated Electrons - Ann Arbor, MI, United States
Duration: Aug 6 2002Aug 6 2002


  • CeRhSi
  • Quantum critical point
  • dHvA effect

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


Dive into the research topics of 'De Haas-van Alphen effect in CeRh2Si2 under pressure'. Together they form a unique fingerprint.

Cite this