De Haas-van Alphen effect in CeRh2Si2 under pressure

Shingo Araki, M. Nakashima, H. Nakawaki, R. Settai, H. Harima, Y. Onuki

Research output: Contribution to journalArticle

Abstract

We observed de Haas-van Alphen (dHvA) oscillations in CeRh2Si2 at 1.3 GPa, higher than the quantum critical pressure pc≃1.0 GPa. Three observed dHvA branches correspond to the result of the 4f-itinerant model. Their cyclotron masses are large, being 24m0, 29m0 and 31m0, about 4 times larger than the corresponding band masses.

Original languageEnglish
Pages (from-to)435-436
Number of pages2
JournalPhysica B: Condensed Matter
Volume312-313
DOIs
Publication statusPublished - Mar 2002
Externally publishedYes

Fingerprint

Cyclotrons
critical pressure
cyclotrons
oscillations

Keywords

  • CeRhSi
  • dHvA effect
  • Quantum critical point

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Araki, S., Nakashima, M., Nakawaki, H., Settai, R., Harima, H., & Onuki, Y. (2002). De Haas-van Alphen effect in CeRh2Si2 under pressure. Physica B: Condensed Matter, 312-313, 435-436. https://doi.org/10.1016/S0921-4526(01)01359-X

De Haas-van Alphen effect in CeRh2Si2 under pressure. / Araki, Shingo; Nakashima, M.; Nakawaki, H.; Settai, R.; Harima, H.; Onuki, Y.

In: Physica B: Condensed Matter, Vol. 312-313, 03.2002, p. 435-436.

Research output: Contribution to journalArticle

Araki, S, Nakashima, M, Nakawaki, H, Settai, R, Harima, H & Onuki, Y 2002, 'De Haas-van Alphen effect in CeRh2Si2 under pressure', Physica B: Condensed Matter, vol. 312-313, pp. 435-436. https://doi.org/10.1016/S0921-4526(01)01359-X
Araki, Shingo ; Nakashima, M. ; Nakawaki, H. ; Settai, R. ; Harima, H. ; Onuki, Y. / De Haas-van Alphen effect in CeRh2Si2 under pressure. In: Physica B: Condensed Matter. 2002 ; Vol. 312-313. pp. 435-436.
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