De Haas-van Alphen effect in CeRh2Si2 under pressure

S. Araki; M. Nakashima; H. Nakawaki; R. Settai; H. Harima; Y. Onuki

doi:10.1016/S0921-4526(01)01359-X

De Haas-van Alphen effect in CeRh₂Si₂ under pressure

S. Araki, M. Nakashima, H. Nakawaki, R. Settai, H. Harima, Y. Onuki

Research output: Contribution to journal › Conference article › peer-review

Abstract

We observed de Haas-van Alphen (dHvA) oscillations in CeRh₂Si₂ at 1.3 GPa, higher than the quantum critical pressure p_c≃1.0 GPa. Three observed dHvA branches correspond to the result of the 4f-itinerant model. Their cyclotron masses are large, being 24m₀, 29m₀ and 31m₀, about 4 times larger than the corresponding band masses.

Original language	English
Pages (from-to)	435-436
Number of pages	2
Journal	Physica B: Condensed Matter
Volume	312-313
DOIs	https://doi.org/10.1016/S0921-4526(01)01359-X
Publication status	Published - Mar 1 2002
Externally published	Yes
Event	International Conference on Strongly Correlated Electrons - Ann Arbor, MI, United States Duration: Aug 6 2002 → Aug 6 2002

Keywords

CeRhSi
Quantum critical point
dHvA effect

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1016/S0921-4526(01)01359-X

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title = "De Haas-van Alphen effect in CeRh2Si2 under pressure",

abstract = "We observed de Haas-van Alphen (dHvA) oscillations in CeRh2Si2 at 1.3 GPa, higher than the quantum critical pressure pc≃1.0 GPa. Three observed dHvA branches correspond to the result of the 4f-itinerant model. Their cyclotron masses are large, being 24m0, 29m0 and 31m0, about 4 times larger than the corresponding band masses.",

keywords = "CeRhSi, Quantum critical point, dHvA effect",

author = "S. Araki and M. Nakashima and H. Nakawaki and R. Settai and H. Harima and Y. Onuki",

year = "2002",

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doi = "10.1016/S0921-4526(01)01359-X",

language = "English",

volume = "312-313",

pages = "435--436",

journal = "Physica B: Condensed Matter",

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note = "International Conference on Strongly Correlated Electrons ; Conference date: 06-08-2002 Through 06-08-2002",

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TY - JOUR

T1 - De Haas-van Alphen effect in CeRh2Si2 under pressure

AU - Araki, S.

AU - Nakashima, M.

AU - Nakawaki, H.

AU - Settai, R.

AU - Harima, H.

AU - Onuki, Y.

PY - 2002/3/1

Y1 - 2002/3/1

N2 - We observed de Haas-van Alphen (dHvA) oscillations in CeRh2Si2 at 1.3 GPa, higher than the quantum critical pressure pc≃1.0 GPa. Three observed dHvA branches correspond to the result of the 4f-itinerant model. Their cyclotron masses are large, being 24m0, 29m0 and 31m0, about 4 times larger than the corresponding band masses.

AB - We observed de Haas-van Alphen (dHvA) oscillations in CeRh2Si2 at 1.3 GPa, higher than the quantum critical pressure pc≃1.0 GPa. Three observed dHvA branches correspond to the result of the 4f-itinerant model. Their cyclotron masses are large, being 24m0, 29m0 and 31m0, about 4 times larger than the corresponding band masses.

KW - CeRhSi

KW - Quantum critical point

KW - dHvA effect

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UR - http://www.scopus.com/inward/citedby.url?scp=0036504201&partnerID=8YFLogxK

U2 - 10.1016/S0921-4526(01)01359-X

DO - 10.1016/S0921-4526(01)01359-X

M3 - Conference article

AN - SCOPUS:0036504201

VL - 312-313

SP - 435

EP - 436

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

T2 - International Conference on Strongly Correlated Electrons

Y2 - 6 August 2002 through 6 August 2002

ER -