Abstract
We observed de Haas-van Alphen (dHvA) oscillations in CeRh2Si2 at 1.3 GPa, higher than the quantum critical pressure pc≃1.0 GPa. Three observed dHvA branches correspond to the result of the 4f-itinerant model. Their cyclotron masses are large, being 24m0, 29m0 and 31m0, about 4 times larger than the corresponding band masses.
Original language | English |
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Pages (from-to) | 435-436 |
Number of pages | 2 |
Journal | Physica B: Condensed Matter |
Volume | 312-313 |
DOIs | |
Publication status | Published - Mar 2002 |
Externally published | Yes |
Event | International Conference on Strongly Correlated Electrons - Ann Arbor, MI, United States Duration: Aug 6 2002 → Aug 6 2002 |
Keywords
- CeRhSi
- Quantum critical point
- dHvA effect
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering