De Haas-van Alphen effect in CeRh2Si2 under pressure

S. Araki, M. Nakashima, H. Nakawaki, R. Settai, H. Harima, Y. Onuki

Research output: Contribution to journalConference article

Abstract

We observed de Haas-van Alphen (dHvA) oscillations in CeRh2Si2 at 1.3 GPa, higher than the quantum critical pressure pc≃1.0 GPa. Three observed dHvA branches correspond to the result of the 4f-itinerant model. Their cyclotron masses are large, being 24m0, 29m0 and 31m0, about 4 times larger than the corresponding band masses.

Original languageEnglish
Pages (from-to)435-436
Number of pages2
JournalPhysica B: Condensed Matter
Volume312-313
DOIs
Publication statusPublished - Mar 1 2002
Externally publishedYes
EventInternational Conference on Strongly Correlated Electrons - Ann Arbor, MI, United States
Duration: Aug 6 2002Aug 6 2002

Keywords

  • CeRhSi
  • Quantum critical point
  • dHvA effect

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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    Araki, S., Nakashima, M., Nakawaki, H., Settai, R., Harima, H., & Onuki, Y. (2002). De Haas-van Alphen effect in CeRh2Si2 under pressure. Physica B: Condensed Matter, 312-313, 435-436. https://doi.org/10.1016/S0921-4526(01)01359-X