De Haas-van Alphen effect in CeRh2Si2 under pressure

S. Araki; M. Nakashima; H. Nakawaki; R. Settai; H. Harima; Y. Onuki

doi:10.1016/S0921-4526(01)01359-X

De Haas-van Alphen effect in CeRh₂Si₂ under pressure

S. Araki, M. Nakashima, H. Nakawaki, R. Settai, H. Harima, Y. Onuki

Research output: Contribution to journal › Conference article › peer-review

Abstract

We observed de Haas-van Alphen (dHvA) oscillations in CeRh₂Si₂ at 1.3 GPa, higher than the quantum critical pressure p_c≃1.0 GPa. Three observed dHvA branches correspond to the result of the 4f-itinerant model. Their cyclotron masses are large, being 24m₀, 29m₀ and 31m₀, about 4 times larger than the corresponding band masses.

Original language	English
Pages (from-to)	435-436
Number of pages	2
Journal	Physica B: Condensed Matter
Volume	312-313
DOIs	https://doi.org/10.1016/S0921-4526(01)01359-X
Publication status	Published - Mar 2002
Externally published	Yes
Event	International Conference on Strongly Correlated Electrons - Ann Arbor, MI, United States Duration: Aug 6 2002 → Aug 6 2002

Keywords

CeRhSi
Quantum critical point
dHvA effect

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1016/S0921-4526(01)01359-X

Cite this

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title = "De Haas-van Alphen effect in CeRh2Si2 under pressure",

abstract = "We observed de Haas-van Alphen (dHvA) oscillations in CeRh2Si2 at 1.3 GPa, higher than the quantum critical pressure pc≃1.0 GPa. Three observed dHvA branches correspond to the result of the 4f-itinerant model. Their cyclotron masses are large, being 24m0, 29m0 and 31m0, about 4 times larger than the corresponding band masses.",

keywords = "CeRhSi, Quantum critical point, dHvA effect",

author = "S. Araki and M. Nakashima and H. Nakawaki and R. Settai and H. Harima and Y. Onuki",

note = "Funding Information: This work was supported by the COE Research (10CE2004) from the Ministry of Education, Culture, Sports, Science and Technology. S. Araki have been supported by JSPS Research Fellowships for Young Scientists.; International Conference on Strongly Correlated Electrons ; Conference date: 06-08-2002 Through 06-08-2002",

year = "2002",

month = mar,

doi = "10.1016/S0921-4526(01)01359-X",

language = "English",

volume = "312-313",

pages = "435--436",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

}

TY - JOUR

T1 - De Haas-van Alphen effect in CeRh2Si2 under pressure

AU - Araki, S.

AU - Nakashima, M.

AU - Nakawaki, H.

AU - Settai, R.

AU - Harima, H.

AU - Onuki, Y.

N1 - Funding Information: This work was supported by the COE Research (10CE2004) from the Ministry of Education, Culture, Sports, Science and Technology. S. Araki have been supported by JSPS Research Fellowships for Young Scientists.

PY - 2002/3

Y1 - 2002/3

N2 - We observed de Haas-van Alphen (dHvA) oscillations in CeRh2Si2 at 1.3 GPa, higher than the quantum critical pressure pc≃1.0 GPa. Three observed dHvA branches correspond to the result of the 4f-itinerant model. Their cyclotron masses are large, being 24m0, 29m0 and 31m0, about 4 times larger than the corresponding band masses.

AB - We observed de Haas-van Alphen (dHvA) oscillations in CeRh2Si2 at 1.3 GPa, higher than the quantum critical pressure pc≃1.0 GPa. Three observed dHvA branches correspond to the result of the 4f-itinerant model. Their cyclotron masses are large, being 24m0, 29m0 and 31m0, about 4 times larger than the corresponding band masses.

KW - CeRhSi

KW - Quantum critical point

KW - dHvA effect

UR - http://www.scopus.com/inward/record.url?scp=0036504201&partnerID=8YFLogxK

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U2 - 10.1016/S0921-4526(01)01359-X

DO - 10.1016/S0921-4526(01)01359-X

M3 - Conference article

AN - SCOPUS:0036504201

VL - 312-313

SP - 435

EP - 436

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

T2 - International Conference on Strongly Correlated Electrons

Y2 - 6 August 2002 through 6 August 2002

ER -