De Haas-van Alphen effect in CeIn3 under pressure

Rikio Settai; Tetsuo Kubo; Hiroaki Shishido; Tatsuo C. Kobayashi; Yoshichika Onuki

doi:10.1016/j.physb.2005.01.119

De Haas-van Alphen effect in CeIn₃ under pressure

Rikio Settai, Tetsuo Kubo, Hiroaki Shishido, Tatsuo C. Kobayashi, Yoshichika Onuki

Research output: Contribution to journal › Article

4 Citations (Scopus)

Abstract

We have investigated a change of the electronic state in CeIn3 via de Haas-van Alphen (dHvA) experiments under pressure up to 2.72 GPa for the magnetic field along 〈110〉. A main Fermi surface with the dHvA frequency F=9.4×107 Oe and a large cyclotron mass mc*=53m0 was observed at 2.72 GPa in the vicinity of the critical pressure where the Néel temperature is suppressed to zero.

Original language	English
Pages (from-to)	317-319
Number of pages	3
Journal	Physica B: Condensed Matter
Volume	359-361
Issue number	SPEC. ISS.
DOIs	https://doi.org/10.1016/j.physb.2005.01.119
Publication status	Published - Apr 30 2005

Keywords

CeIn
Pressure effect
Quantum phase transition
dHvA effect

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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Settai, R., Kubo, T., Shishido, H., Kobayashi, T. C., & Onuki, Y. (2005). De Haas-van Alphen effect in CeIn₃ under pressure. Physica B: Condensed Matter, 359-361(SPEC. ISS.), 317-319. https://doi.org/10.1016/j.physb.2005.01.119

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AU - Kubo, Tetsuo

AU - Shishido, Hiroaki

AU - Kobayashi, Tatsuo C.

AU - Onuki, Yoshichika

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