De Haas-van Alphen effect in CeIn3 under pressure

Rikio Settai, Tetsuo Kubo, Hiroaki Shishido, Tatsuo C. Kobayashi, Yoshichika Onuki

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We have investigated a change of the electronic state in CeIn3 via de Haas-van Alphen (dHvA) experiments under pressure up to 2.72 GPa for the magnetic field along 〈110〉. A main Fermi surface with the dHvA frequency F=9.4×107 Oe and a large cyclotron mass mc*=53m0 was observed at 2.72 GPa in the vicinity of the critical pressure where the Néel temperature is suppressed to zero.

Original languageEnglish
Pages (from-to)317-319
Number of pages3
JournalPhysica B: Condensed Matter
Volume359-361
Issue numberSPEC. ISS.
DOIs
Publication statusPublished - Apr 30 2005

Keywords

  • CeIn
  • Pressure effect
  • Quantum phase transition
  • dHvA effect

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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