De Haas-van Alphen effect and Fermi surfaces in UC

Etsuji Yamamoto, Yoshinori Haga, Yoshihiko Inada, Masao Murakawa, Yoshichika Onuki, Takahiro Maehira, Akira Hasegawa

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We grew a high-quality single crystal of UC and carried out the de Haas-van Alphen(dHvA) experiments. The Fermi surfaces of a semimetal UC were confirmed to consist of three ellipsoidal hole-Fermi surfaces centered at the X points and six cushion-like electron-Fermi surfaces centered at the W points in the fcc Brillouin zone. These Fermi surface properties are based on the combined results of dHvA experiments and SRAPW-energy band calculations. The hole and electron Fermi surfaces mainly originate from the C 2p valence band and the U 5f conduction band, respectively. The cyclotron mass of the hole is light, being a rest mass of an electron m0, while the mass of the electron is heavy, being in the range from 4.0 to 15 m0. The mass enhancement is large for the electron Fermi surface, originated from the U 5f character.

Original languageEnglish
Pages (from-to)3953-3959
Number of pages7
Journaljournal of the physical society of japan
Volume68
Issue number12
DOIs
Publication statusPublished - Dec 1999
Externally publishedYes

Keywords

  • Energy band structure
  • Fermi surface
  • UC
  • dHvA

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Yamamoto, E., Haga, Y., Inada, Y., Murakawa, M., Onuki, Y., Maehira, T., & Hasegawa, A. (1999). De Haas-van Alphen effect and Fermi surfaces in UC. journal of the physical society of japan, 68(12), 3953-3959. https://doi.org/10.1143/JPSJ.68.3953