De Haas-van Alphen effect and Fermi surfaces in UC

Etsuji Yamamoto, Yoshinori Haga, Takahiro Maehira, Yoshihiko Inada, Masao Murakawa, Yoshichika Onuki, Akira Hasegawa

Research output: Contribution to journalArticlepeer-review

Abstract

We grew a high-quality single crystal of UC and carried out the de Haas-van Alphen (dHvA) experiments. The Fermi surfaces of a semimetal UC were confirmed to consist of three ellipsoidal hole-Fermi surfaces centered at the X points and six cushion-like electron-Fermi surfaces centered at the W points in the FCC Brillouin zone. These Fermi surface properties are clarified on the basis of the combined results of dHvA experiments and SRAPW-energy band calculations. The hole and electron Fermi surfaces mainly originate from the C-2p valence band and the U-5f conduction band, respectively. The cyclotron mass of the hole is light, being a rest mass of an electron m0, while the mass of the electron is heavy, being in the range from 4.0 to 15m0. The mass enhancement is large for the electron Fermi surface, originated from the U-5f character.

Original languageEnglish
Pages (from-to)51-53
Number of pages3
JournalJournal of Magnetism and Magnetic Materials
Volume226-230
Issue numberPART I
DOIs
Publication statusPublished - 2001
Externally publishedYes

Keywords

  • Band calculation
  • De Haas-van Alphen effect
  • Fermi surface

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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