Core-level electronic structure evolution of heavily boron-doped superconducting diamond studied with hard x-ray photoemission spectroscopy

T. Yokoya, E. Ikenaga, M. Kobata, H. Okazaki, K. Kobayashi, A. Takeuchi, A. Awaji, Y. Takano, M. Nagao, I. Sakaguchi, T. Takenouchi, K. Kobayashi, H. Kawarada, T. Oguchi

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Hard x-ray photoemission spectroscopy has been used to study intrinsic core-level electronic structure evolution of heavily boron-doped superconducting diamond films made with a microwave plasma-assisted chemical-vapor deposition method. The boron concentration dependent C 1s core-level spectra show systematic changes in the shift of the main peak and in the evolution of an additional feature at 1.1-1.3 eV lower binding energy than the main peak. In comparison to a low boron concentration nonsuperconducting diamond, the higher boron concentration doped diamond films show formation of several additional features in the B 1s core levels. Based on the present results, the local chemical environments around the doped boron atoms, the efficiency of hole doping by boron doping, and the implications for a recent x-ray absorption study are discussed.

Original languageEnglish
Article number205117
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume75
Issue number20
DOIs
Publication statusPublished - May 21 2007

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Core-level electronic structure evolution of heavily boron-doped superconducting diamond studied with hard x-ray photoemission spectroscopy'. Together they form a unique fingerprint.

Cite this