Core-level electronic structure evolution of heavily boron-doped superconducting diamond studied with hard x-ray photoemission spectroscopy

Takayoshi Yokoya, E. Ikenaga, M. Kobata, H. Okazaki, K. Kobayashi, A. Takeuchi, A. Awaji, Y. Takano, M. Nagao, I. Sakaguchi, T. Takenouchi, K. Kobayashi, H. Kawarada, T. Oguchi

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Hard x-ray photoemission spectroscopy has been used to study intrinsic core-level electronic structure evolution of heavily boron-doped superconducting diamond films made with a microwave plasma-assisted chemical-vapor deposition method. The boron concentration dependent C 1s core-level spectra show systematic changes in the shift of the main peak and in the evolution of an additional feature at 1.1-1.3 eV lower binding energy than the main peak. In comparison to a low boron concentration nonsuperconducting diamond, the higher boron concentration doped diamond films show formation of several additional features in the B 1s core levels. Based on the present results, the local chemical environments around the doped boron atoms, the efficiency of hole doping by boron doping, and the implications for a recent x-ray absorption study are discussed.

Original languageEnglish
Article number205117
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume75
Issue number20
DOIs
Publication statusPublished - May 21 2007

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Diamond
Boron
Core levels
Photoelectron spectroscopy
Electronic structure
Diamonds
boron
photoelectric emission
diamonds
electronic structure
X rays
spectroscopy
x rays
Diamond films
diamond films
Doping (additives)
Superconducting films
Binding energy
x ray absorption
Chemical vapor deposition

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Core-level electronic structure evolution of heavily boron-doped superconducting diamond studied with hard x-ray photoemission spectroscopy. / Yokoya, Takayoshi; Ikenaga, E.; Kobata, M.; Okazaki, H.; Kobayashi, K.; Takeuchi, A.; Awaji, A.; Takano, Y.; Nagao, M.; Sakaguchi, I.; Takenouchi, T.; Kobayashi, K.; Kawarada, H.; Oguchi, T.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 75, No. 20, 205117, 21.05.2007.

Research output: Contribution to journalArticle

Yokoya, T, Ikenaga, E, Kobata, M, Okazaki, H, Kobayashi, K, Takeuchi, A, Awaji, A, Takano, Y, Nagao, M, Sakaguchi, I, Takenouchi, T, Kobayashi, K, Kawarada, H & Oguchi, T 2007, 'Core-level electronic structure evolution of heavily boron-doped superconducting diamond studied with hard x-ray photoemission spectroscopy', Physical Review B - Condensed Matter and Materials Physics, vol. 75, no. 20, 205117. https://doi.org/10.1103/PhysRevB.75.205117
Yokoya, Takayoshi ; Ikenaga, E. ; Kobata, M. ; Okazaki, H. ; Kobayashi, K. ; Takeuchi, A. ; Awaji, A. ; Takano, Y. ; Nagao, M. ; Sakaguchi, I. ; Takenouchi, T. ; Kobayashi, K. ; Kawarada, H. ; Oguchi, T. / Core-level electronic structure evolution of heavily boron-doped superconducting diamond studied with hard x-ray photoemission spectroscopy. In: Physical Review B - Condensed Matter and Materials Physics. 2007 ; Vol. 75, No. 20.
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