Control of work function of graphene by plasma assisted nitrogen doping

Keishi Akada, Tomo O. Terasawa, Gaku Imamura, Seiji Obata, Koichiro Saiki

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

Nitrogen doping is expected to provide several intriguing properties to graphene. Nitrogen plasma treatment to defect-free and defective highly oriented pyrolytic graphite (HOPG) samples causes doping of nitrogen atom into the graphene layer. Nitrogen atoms are initially doped at a graphitic site (inside the graphene) for the defect-free HOPG, while doping to a pyridinic or a pyrrolic site (edge of the graphene) is dominant for the defective HOPG. The work function of graphene correlates strongly with the site and amount of doped nitrogen. Nitrogen atoms doped at a graphitic site lower the work function, while nitrogen atoms at a pyridinic or a pyrrolic site increase the work function. Control of plasma treatment time and the amount of initial defect could change the work function of graphite from 4.3eV to 5.4eV, which would open a way to tailor the nature of graphene for various industrial applications.

Original languageEnglish
Article number131602
JournalApplied Physics Letters
Volume104
Issue number13
DOIs
Publication statusPublished - Mar 31 2014
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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