Control of Particle Generation in CVD Reactor by Ionization of Source Vapor

Two different ionization CVD reactors where the surface corona discharger is used as the ion source, are developed and film preparation by a tetraethoxysilane/ozone atmospheric pressure CVD is arrempted. In the close-type reactor where the discharger is close to the substrate, discontinuous films where thickness changes alternately and extremely from zero to a few microns in the distance of millimeter order are formed probably due to the charge of ions accumulated on the surface of Si wafer. In the separate-type reactor where the discharger is distant from the substrate, films with uniform thickness are formed, and the film growth rate is 1.3-1.5 times higher than that without discharge. The separate-type reactor prepared films with strong flow-like shape under conditions where films without flow-like shape are formed in the common reactor. Nanometer-sized particles of 20-100 nm in diameter, which have been generally generated without discharge, are not detected in the ionization CVD reactor.