Two different ionization CVD reactors where the surface corona discharger is used as the ion source, are developed and film preparation by a tetraethoxysilane/ozone atmospheric pressure CVD is arrempted. In the close-type reactor where the discharger is close to the substrate, discontinuous films where thickness changes alternately and extremely from zero to a few microns in the distance of millimeter order are formed probably due to the charge of ions accumulated on the surface of Si wafer. In the separate-type reactor where the discharger is distant from the substrate, films with uniform thickness are formed, and the film growth rate is 1.3-1.5 times higher than that without discharge. The separate-type reactor prepared films with strong flow-like shape under conditions where films without flow-like shape are formed in the common reactor. Nanometer-sized particles of 20-100 nm in diameter, which have been generally generated without discharge, are not detected in the ionization CVD reactor.
- atmospheric pressure chemical vapor deposition
- dielectric film
- gas-phase nucleation
ASJC Scopus subject areas
- Chemical Engineering(all)