Control of Particle Generation in CVD Reactor by Ionization of Source Vapor

Motoaki Adachi, Toshiyuki Fujimoto, Koichi Nakaso, Tae Oh Kim, Kikuo Okuyama

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Two different ionization CVD reactors where the surface corona discharger is used as the ion source, are developed and film preparation by a tetraethoxysilane/ozone atmospheric pressure CVD is arrempted. In the close-type reactor where the discharger is close to the substrate, discontinuous films where thickness changes alternately and extremely from zero to a few microns in the distance of millimeter order are formed probably due to the charge of ions accumulated on the surface of Si wafer. In the separate-type reactor where the discharger is distant from the substrate, films with uniform thickness are formed, and the film growth rate is 1.3-1.5 times higher than that without discharge. The separate-type reactor prepared films with strong flow-like shape under conditions where films without flow-like shape are formed in the common reactor. Nanometer-sized particles of 20-100 nm in diameter, which have been generally generated without discharge, are not detected in the ionization CVD reactor.

Original languageEnglish
Pages (from-to)878-883
Number of pages6
JournalKAGAKU KOGAKU RONBUNSHU
Volume25
Issue number6
DOIs
Publication statusPublished - Jan 1 1999
Externally publishedYes

Keywords

  • atmospheric pressure chemical vapor deposition
  • dielectric film
  • gas-phase nucleation
  • ionization
  • tetraethoxysilane

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)

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