Conductivity switching by ultraviolet light in tin dioxide thin films

Naoko Takubo; Yuji Muraoka; Zenji Hiroi

doi:10.1143/APEX.2.045501

Conductivity switching by ultraviolet light in tin dioxide thin films

Naoko Takubo, Yuji Muraoka, Zenji Hiroi

Research Institute for Interdisciplinary Science

Research output: Contribution to journal › Article

5 Citations (Scopus)

Abstract

The effects of ultraviolet (UV) light Irradiation on the conducting properties of SnO_2-x films are studied at room temperature (RT). Large enhancements in conductivity up to 4 orders of magnitude are observed in vacuum for almost insulating films containing small amounts of oxygen vacancies. It Is ascribed to the desorption of negatively-charged oxygen species from the grain boundary, which dramatically enhances the mobility of electron carriers already present in the grains through the reduction of potential barriers at the boundary. The lowresistive state induced by light irradiation recovers to the original insulating state by exposing oxygen gas at RT.

Original language	English
Pages (from-to)	455011-455013
Number of pages	3
Journal	Applied Physics Express
Volume	2
Issue number	4
DOIs	https://doi.org/10.1143/APEX.2.045501
Publication status	Published - Apr 2009

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ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Cite this

Takubo, N., Muraoka, Y., & Hiroi, Z. (2009). Conductivity switching by ultraviolet light in tin dioxide thin films. Applied Physics Express, 2(4), 455011-455013. https://doi.org/10.1143/APEX.2.045501

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AB - The effects of ultraviolet (UV) light Irradiation on the conducting properties of SnO2-x films are studied at room temperature (RT). Large enhancements in conductivity up to 4 orders of magnitude are observed in vacuum for almost insulating films containing small amounts of oxygen vacancies. It Is ascribed to the desorption of negatively-charged oxygen species from the grain boundary, which dramatically enhances the mobility of electron carriers already present in the grains through the reduction of potential barriers at the boundary. The lowresistive state induced by light irradiation recovers to the original insulating state by exposing oxygen gas at RT.

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Access to Document

10.1143/APEX.2.045501