TY - GEN
T1 - Computational exploration of novel silicon nanostructures
AU - Nishio, Kengo
AU - Ozaki, Taisuke
AU - Morishita, Tetsuya
AU - Shinoda, Wataru
AU - Mikami, Masuhiro
PY - 2009
Y1 - 2009
N2 - Discovery of novel Si nanostructures would open up a new avenue for science and technology as the discoveries of C60 and carbon nanotubes did. With this expectation, we have explored novel Si nanostructures by combining empirical moleculardynamics simulations and structure optimizations with the density functional theory1,2,3,4. Our molecular-dynamics simulations demonstrate (1) an icosahedral Si nanodot forms by freezing a droplet in vacuum1, (2) Si-fullerene-linked nanowires, such as Si16- and Si20-linked nanowires, form by freezing liquid Si inside carbon nanotubes2, and (3) a polyicosahedral Si nanowire forms by freezing liquid Si inside a cylindrical nanopore3. The unique cage structure of the polyicosahedral Si nanowire allows us to tune the electronic properties by encapsulating guest atoms into its cages. Our density functional theory calculations reveal that a semiconducting hydrogen-terminated polyicosahedral Si nanowire becomes metallic by the sodium and iodine doping4.
AB - Discovery of novel Si nanostructures would open up a new avenue for science and technology as the discoveries of C60 and carbon nanotubes did. With this expectation, we have explored novel Si nanostructures by combining empirical moleculardynamics simulations and structure optimizations with the density functional theory1,2,3,4. Our molecular-dynamics simulations demonstrate (1) an icosahedral Si nanodot forms by freezing a droplet in vacuum1, (2) Si-fullerene-linked nanowires, such as Si16- and Si20-linked nanowires, form by freezing liquid Si inside carbon nanotubes2, and (3) a polyicosahedral Si nanowire forms by freezing liquid Si inside a cylindrical nanopore3. The unique cage structure of the polyicosahedral Si nanowire allows us to tune the electronic properties by encapsulating guest atoms into its cages. Our density functional theory calculations reveal that a semiconducting hydrogen-terminated polyicosahedral Si nanowire becomes metallic by the sodium and iodine doping4.
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U2 - 10.1109/ULIS.2009.4897539
DO - 10.1109/ULIS.2009.4897539
M3 - Conference contribution
AN - SCOPUS:67650709137
SN - 9781424437054
T3 - Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009
SP - 61
EP - 64
BT - Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009
T2 - 10th International Conference on ULtimate Integration of Silicon, ULIS 2009
Y2 - 18 March 2009 through 20 March 2009
ER -