TY - JOUR
T1 - Clear and transparent nanocrystals for infrared-responsive carrier transfer
AU - Sakamoto, Masanori
AU - Kawawaki, Tokuhisa
AU - Kimura, Masato
AU - Yoshinaga, Taizo
AU - Vequizo, Junie Jhon M.
AU - Matsunaga, Hironori
AU - Ranasinghe, Chandana Sampath Kumara
AU - Yamakata, Akira
AU - Matsuzaki, Hiroyuki
AU - Furube, Akihiro
AU - Teranishi, Toshiharu
N1 - Funding Information:
We thank T. Nagai, and K. Kimoto for the observation of HAADF-STEM, HRTEM image and EDS mapping. This work was supported by JSPS KAKENHI grant number JP16H06520 (Coordination Asymmetry) (T.T.), JP17H05257 (Photosynergetics) (M.S.), JP17H05491 (Mixed Anion) (A.Y.), JP17K19031 (Grant-in-Aid for Challenging Exploratory Research) (M.S.), the Collaborative Research Project of the Institute of Chemical Research, Kyoto University and AIST Nano-characterisation Facility platform as a programme of “Nanotechnology Platform” of the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan. We thank T. Yoshinaga for the support of synthesising samples and experiments. This work was supported by NIMS microstructural characterization platform as a program of “Nanotechnology Platform” of MEXT, Japan.
Publisher Copyright:
© 2019, The Author(s).
PY - 2019/12/1
Y1 - 2019/12/1
N2 - Infrared-light-induced carrier transfer is a key technology for ‘invisible’ optical devices for information communication systems and energy devices. However, clear and colourless photo-induced carrier transfer has not yet been demonstrated in the field of photochemistry, to the best of our knowledge. Here, we resolve this problem by employing short-wavelength-infrared (1400–4000 nm) localized surface plasmon resonance-induced electron injection from indium tin oxide nanocrystals to transparent metal oxides. The time-resolved infrared measurements visualize the dynamics of the carrier in this invisible system. Selective excitation of localized surface plasmon resonances causes hot electron injection with high efficiency (33%) and long-lived charge separation (~ 2–200 μs). We anticipate our study not only provides a breakthrough for plasmonic carrier transfer systems but may also stimulate the invention of state-of-the-art invisible optical devices.
AB - Infrared-light-induced carrier transfer is a key technology for ‘invisible’ optical devices for information communication systems and energy devices. However, clear and colourless photo-induced carrier transfer has not yet been demonstrated in the field of photochemistry, to the best of our knowledge. Here, we resolve this problem by employing short-wavelength-infrared (1400–4000 nm) localized surface plasmon resonance-induced electron injection from indium tin oxide nanocrystals to transparent metal oxides. The time-resolved infrared measurements visualize the dynamics of the carrier in this invisible system. Selective excitation of localized surface plasmon resonances causes hot electron injection with high efficiency (33%) and long-lived charge separation (~ 2–200 μs). We anticipate our study not only provides a breakthrough for plasmonic carrier transfer systems but may also stimulate the invention of state-of-the-art invisible optical devices.
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U2 - 10.1038/s41467-018-08226-2
DO - 10.1038/s41467-018-08226-2
M3 - Article
C2 - 30679425
AN - SCOPUS:85060551706
SN - 2041-1723
VL - 10
JO - Nature Communications
JF - Nature Communications
IS - 1
M1 - 406
ER -