Chemical sputtering of GaN crystal with a chlorine-adsorbed layer

Kenji Harafuji, Katsuyuki Kawamura

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A molecular dynamics simulation has been carried out to investigate the chemical sputtering of wurtzite-type GaN(0001) surfaces with and without a Cl-adsorbed layer. Sputtering of crystalline atoms is examined with Ar impacts at energies less than 250 eV. Ga sputtering does not take place at all on the clean surface without Cl-adsorption. On the other hand, Ga sputtering yield has a large finite value for Ar impact on the Cl-adsorbed surface. Generally, Ga is sputtered in the form of Ga-Cl2, and sometimes in the form of Ga-Cl, Ga-N-Cl, Ga-N, and Ga-N-Ga-Cl2. Ga atoms are not singly sputtered. Atoms escape from the surface in the time range of 200-3000 fs after the impact of the incident Ar atom. The shorter and longer escape times correspond to physical and chemical sputtering, respectively.

Original languageEnglish
Article number08JE03
JournalJapanese Journal of Applied Physics
Volume49
Issue number8 PART 2
DOIs
Publication statusPublished - Aug 2010
Externally publishedYes

Fingerprint

Chlorine
chlorine
Sputtering
sputtering
Crystals
Atoms
crystals
escape
atoms
wurtzite
Molecular dynamics
molecular dynamics
Crystalline materials
Adsorption
adsorption
Computer simulation
simulation
energy

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Chemical sputtering of GaN crystal with a chlorine-adsorbed layer. / Harafuji, Kenji; Kawamura, Katsuyuki.

In: Japanese Journal of Applied Physics, Vol. 49, No. 8 PART 2, 08JE03, 08.2010.

Research output: Contribution to journalArticle

Harafuji, Kenji ; Kawamura, Katsuyuki. / Chemical sputtering of GaN crystal with a chlorine-adsorbed layer. In: Japanese Journal of Applied Physics. 2010 ; Vol. 49, No. 8 PART 2.
@article{5e0cbdab95e740ed92ddce5f6bb86937,
title = "Chemical sputtering of GaN crystal with a chlorine-adsorbed layer",
abstract = "A molecular dynamics simulation has been carried out to investigate the chemical sputtering of wurtzite-type GaN(0001) surfaces with and without a Cl-adsorbed layer. Sputtering of crystalline atoms is examined with Ar impacts at energies less than 250 eV. Ga sputtering does not take place at all on the clean surface without Cl-adsorption. On the other hand, Ga sputtering yield has a large finite value for Ar impact on the Cl-adsorbed surface. Generally, Ga is sputtered in the form of Ga-Cl2, and sometimes in the form of Ga-Cl, Ga-N-Cl, Ga-N, and Ga-N-Ga-Cl2. Ga atoms are not singly sputtered. Atoms escape from the surface in the time range of 200-3000 fs after the impact of the incident Ar atom. The shorter and longer escape times correspond to physical and chemical sputtering, respectively.",
author = "Kenji Harafuji and Katsuyuki Kawamura",
year = "2010",
month = "8",
doi = "10.1143/JJAP.49.08JE03",
language = "English",
volume = "49",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "INSTITUTE OF PURE AND APPLIED PHYSICS",
number = "8 PART 2",

}

TY - JOUR

T1 - Chemical sputtering of GaN crystal with a chlorine-adsorbed layer

AU - Harafuji, Kenji

AU - Kawamura, Katsuyuki

PY - 2010/8

Y1 - 2010/8

N2 - A molecular dynamics simulation has been carried out to investigate the chemical sputtering of wurtzite-type GaN(0001) surfaces with and without a Cl-adsorbed layer. Sputtering of crystalline atoms is examined with Ar impacts at energies less than 250 eV. Ga sputtering does not take place at all on the clean surface without Cl-adsorption. On the other hand, Ga sputtering yield has a large finite value for Ar impact on the Cl-adsorbed surface. Generally, Ga is sputtered in the form of Ga-Cl2, and sometimes in the form of Ga-Cl, Ga-N-Cl, Ga-N, and Ga-N-Ga-Cl2. Ga atoms are not singly sputtered. Atoms escape from the surface in the time range of 200-3000 fs after the impact of the incident Ar atom. The shorter and longer escape times correspond to physical and chemical sputtering, respectively.

AB - A molecular dynamics simulation has been carried out to investigate the chemical sputtering of wurtzite-type GaN(0001) surfaces with and without a Cl-adsorbed layer. Sputtering of crystalline atoms is examined with Ar impacts at energies less than 250 eV. Ga sputtering does not take place at all on the clean surface without Cl-adsorption. On the other hand, Ga sputtering yield has a large finite value for Ar impact on the Cl-adsorbed surface. Generally, Ga is sputtered in the form of Ga-Cl2, and sometimes in the form of Ga-Cl, Ga-N-Cl, Ga-N, and Ga-N-Ga-Cl2. Ga atoms are not singly sputtered. Atoms escape from the surface in the time range of 200-3000 fs after the impact of the incident Ar atom. The shorter and longer escape times correspond to physical and chemical sputtering, respectively.

UR - http://www.scopus.com/inward/record.url?scp=77958109428&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77958109428&partnerID=8YFLogxK

U2 - 10.1143/JJAP.49.08JE03

DO - 10.1143/JJAP.49.08JE03

M3 - Article

AN - SCOPUS:77958109428

VL - 49

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 8 PART 2

M1 - 08JE03

ER -