Charging phenomenon of insulators in negative-ion implantation

Yoshitaka Toyota; Hiroshi Tsuji; Shoji Nagumo; Yasuhito Gotoh; Junzo Ishikawa

doi:10.1016/0169-4332(96)00242-5

Charging phenomenon of insulators in negative-ion implantation

Yoshitaka Toyota, Hiroshi Tsuji, Shoji Nagumo, Yasuhito Gotoh, Junzo Ishikawa

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The energy distribution of secondary electrons emitted from an insulator during negative-ion implantation was measured. According to secondary-electron-energy analysis, the charging voltage of insulator was estimated from the measured energy distribution. The experimental results in negative-carbon-ion implantation showed that the charging voltages of a quartz glass plate and a photoresist film on silicon substrate are several negative volts in the energy range from 5 to 35 keV and decrease gradually with increasing ion energy. The low negative charging voltage of insulator and the most probable energy of the secondary-electron energy distribution during negative-ion implantation are discussed using a charging model based on an electric double layer.

Original language	English
Pages (from-to)	360-364
Number of pages	5
Journal	Applied Surface Science
Volume	100-101
DOIs	https://doi.org/10.1016/0169-4332(96)00242-5
Publication status	Published - Jul 1996
Externally published	Yes

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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@article{01efcbe08db941bbbcf9550a703dc6aa,

title = "Charging phenomenon of insulators in negative-ion implantation",

abstract = "The energy distribution of secondary electrons emitted from an insulator during negative-ion implantation was measured. According to secondary-electron-energy analysis, the charging voltage of insulator was estimated from the measured energy distribution. The experimental results in negative-carbon-ion implantation showed that the charging voltages of a quartz glass plate and a photoresist film on silicon substrate are several negative volts in the energy range from 5 to 35 keV and decrease gradually with increasing ion energy. The low negative charging voltage of insulator and the most probable energy of the secondary-electron energy distribution during negative-ion implantation are discussed using a charging model based on an electric double layer.",

author = "Yoshitaka Toyota and Hiroshi Tsuji and Shoji Nagumo and Yasuhito Gotoh and Junzo Ishikawa",

year = "1996",

month = jul,

doi = "10.1016/0169-4332(96)00242-5",

language = "English",

volume = "100-101",

pages = "360--364",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

}

TY - JOUR

T1 - Charging phenomenon of insulators in negative-ion implantation

AU - Toyota, Yoshitaka

AU - Tsuji, Hiroshi

AU - Nagumo, Shoji

AU - Gotoh, Yasuhito

AU - Ishikawa, Junzo

PY - 1996/7

Y1 - 1996/7

N2 - The energy distribution of secondary electrons emitted from an insulator during negative-ion implantation was measured. According to secondary-electron-energy analysis, the charging voltage of insulator was estimated from the measured energy distribution. The experimental results in negative-carbon-ion implantation showed that the charging voltages of a quartz glass plate and a photoresist film on silicon substrate are several negative volts in the energy range from 5 to 35 keV and decrease gradually with increasing ion energy. The low negative charging voltage of insulator and the most probable energy of the secondary-electron energy distribution during negative-ion implantation are discussed using a charging model based on an electric double layer.

AB - The energy distribution of secondary electrons emitted from an insulator during negative-ion implantation was measured. According to secondary-electron-energy analysis, the charging voltage of insulator was estimated from the measured energy distribution. The experimental results in negative-carbon-ion implantation showed that the charging voltages of a quartz glass plate and a photoresist film on silicon substrate are several negative volts in the energy range from 5 to 35 keV and decrease gradually with increasing ion energy. The low negative charging voltage of insulator and the most probable energy of the secondary-electron energy distribution during negative-ion implantation are discussed using a charging model based on an electric double layer.

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UR - http://www.scopus.com/inward/citedby.url?scp=0030564431&partnerID=8YFLogxK

U2 - 10.1016/0169-4332(96)00242-5

DO - 10.1016/0169-4332(96)00242-5

M3 - Article

AN - SCOPUS:0030564431

SN - 0169-4332

VL - 100-101

SP - 360

EP - 364

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Charging phenomenon of insulators in negative-ion implantation

Abstract

ASJC Scopus subject areas

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