Charging phenomenon of insulators in negative-ion implantation

Yoshitaka Toyota, Hiroshi Tsuji, Shoji Nagumo, Yasuhito Gotoh, Junzo Ishikawa

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The energy distribution of secondary electrons emitted from an insulator during negative-ion implantation was measured. According to secondary-electron-energy analysis, the charging voltage of insulator was estimated from the measured energy distribution. The experimental results in negative-carbon-ion implantation showed that the charging voltages of a quartz glass plate and a photoresist film on silicon substrate are several negative volts in the energy range from 5 to 35 keV and decrease gradually with increasing ion energy. The low negative charging voltage of insulator and the most probable energy of the secondary-electron energy distribution during negative-ion implantation are discussed using a charging model based on an electric double layer.

Original languageEnglish
Pages (from-to)360-364
Number of pages5
JournalApplied Surface Science
Volume100-101
DOIs
Publication statusPublished - Jul 1996
Externally publishedYes

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Fingerprint Dive into the research topics of 'Charging phenomenon of insulators in negative-ion implantation'. Together they form a unique fingerprint.

  • Cite this