Charging phenomenon of insulators in negative-ion implantation

Yoshitaka Toyota, Hiroshi Tsuji, Shoji Nagumo, Yasuhito Gotoh, Junzo Ishikawa

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The energy distribution of secondary electrons emitted from an insulator during negative-ion implantation was measured. According to secondary-electron-energy analysis, the charging voltage of insulator was estimated from the measured energy distribution. The experimental results in negative-carbon-ion implantation showed that the charging voltages of a quartz glass plate and a photoresist film on silicon substrate are several negative volts in the energy range from 5 to 35 keV and decrease gradually with increasing ion energy. The low negative charging voltage of insulator and the most probable energy of the secondary-electron energy distribution during negative-ion implantation are discussed using a charging model based on an electric double layer.

Original languageEnglish
Pages (from-to)360-364
Number of pages5
JournalApplied Surface Science
Volume100-101
DOIs
Publication statusPublished - Jul 1996
Externally publishedYes

Fingerprint

Ion implantation
negative ions
charging
ion implantation
Negative ions
insulators
energy distribution
Electrons
Electric potential
Quartz
electric potential
Silicon
electron energy
Photoresists
Carbon
photoresists
Ions
energy
Glass
quartz

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

Cite this

Charging phenomenon of insulators in negative-ion implantation. / Toyota, Yoshitaka; Tsuji, Hiroshi; Nagumo, Shoji; Gotoh, Yasuhito; Ishikawa, Junzo.

In: Applied Surface Science, Vol. 100-101, 07.1996, p. 360-364.

Research output: Contribution to journalArticle

Toyota, Yoshitaka ; Tsuji, Hiroshi ; Nagumo, Shoji ; Gotoh, Yasuhito ; Ishikawa, Junzo. / Charging phenomenon of insulators in negative-ion implantation. In: Applied Surface Science. 1996 ; Vol. 100-101. pp. 360-364.
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