Characterization of an oxide semiconductor prepared by microwave sintering

Hea Jeong Cheong, Nobuko Fukuda, Heisuke Sakai, Shintaro Ogura, Kazuhiko Takeuchi, Ritsuko Nagahata, Sei Uemura

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8 Citations (Scopus)


We fabricated a thin-film transistor (TFT) using amorphous indium gallium zinc oxide (a-IGZO), which was formed through annealing of an IGZO precursor film with a single-mode cavity microwave at 2.45GHz. The transisitor fabricated with the a-IGZO film prepared by microwave annealing for 15min showed higher device performance, i.e., a field effect mobility of 5.75 × 10 -2cm2V-1s-1, an on/off ratio of 106, and a threshold voltage of 20V, than that prepared by annealing with a conventional oven for 120 min. The Raman spectra confirm that the device improvement originates from the decrease in the number of -OH groups and removal of organic species for 15min by microwave annealing. These results suggest that the microwave annealing method has an advantage as the annealing process of solution-processed oxide semiconductors to reduce the process time. It can be applied to the fabrication of TFTs.

Original languageEnglish
Article number05HA12
JournalJapanese journal of applied physics
Issue number5 SPEC. ISSUE 3
Publication statusPublished - May 2014
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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