Characterization of amorphous tungsten trioxide thin films prepared by rf magnetron sputtering method

Tokuro Nanba, Tadashi Takahashi, Jun Takada, Akiyoshi Osaka, Yoshinari Miura, Itaru Yasui, Akira Kishimoto, Tetsuichi Kudo

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

Amorphous tungsten trioxide thin films were prepared using a rf magnetron sputtering method. The relation between structure and electrochromic properties was investigated. At the macroscopic level, the films had dense structures. From Raman spectroscopic and X-ray radial distribution analyses, it was deduced that the networks were basically formed by three-, four- and six-membered rings of corner-sharing WO6 octahedra, and in the films with low O/W atomic ratios many edge-sharing units were present. It was also found that the films with high O/W ratios showed good electrochromic properties, which were closely related to the six-membered rings.

Original languageEnglish
Pages (from-to)233-237
Number of pages5
JournalJournal of Non-Crystalline Solids
Volume178
Issue numberC
DOIs
Publication statusPublished - Nov 3 1994

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Magnetron sputtering
Tungsten
magnetron sputtering
tungsten
Thin films
thin films
rings
radial distribution
X rays
tungsten oxide
x rays

ASJC Scopus subject areas

  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials

Cite this

Characterization of amorphous tungsten trioxide thin films prepared by rf magnetron sputtering method. / Nanba, Tokuro; Takahashi, Tadashi; Takada, Jun; Osaka, Akiyoshi; Miura, Yoshinari; Yasui, Itaru; Kishimoto, Akira; Kudo, Tetsuichi.

In: Journal of Non-Crystalline Solids, Vol. 178, No. C, 03.11.1994, p. 233-237.

Research output: Contribution to journalArticle

Nanba, Tokuro ; Takahashi, Tadashi ; Takada, Jun ; Osaka, Akiyoshi ; Miura, Yoshinari ; Yasui, Itaru ; Kishimoto, Akira ; Kudo, Tetsuichi. / Characterization of amorphous tungsten trioxide thin films prepared by rf magnetron sputtering method. In: Journal of Non-Crystalline Solids. 1994 ; Vol. 178, No. C. pp. 233-237.
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