Characterization of amorphous carbon nitride by bottom-gated thin-film structure

Yasuhiko Hayashi, N. Kamada, T. Soga, T. Jimbo

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We describe the characterization of nitrogen-incorporated amorphous carbon (a-C:N) films by using a double beam method. The carrier transport of a-C:N films deposited at various substrate temperatures was investigated using a bottom-gated thin-film transistor (TFT). At substrate temperatures below 300 °C, the optical band gap (Eopt) and the Raman intensity ratio between the D (∼1360 cm- 1) and G (∼1590 cm- 1) peaks (ID / IG) of an a-C:N film deposited at room temperature were observed to vary only marginally from 1.9 eV and 0.88, respectively. The electrical conductivity of the a-C:N film increased by more than four orders of magnitude with an increase in the substrate temperature from 150 to 300 °C due to an improvement in the activation of the nitrogen-incorporated a-C film caused by the thermal annealing effect. Based on the Eopt and ID / IG values, we concluded that this behavior is not responsible for the change in the hybridization of carbon atoms. The a-C:N based TFT exhibited an ambipolar transport with the strong p-type operation. The field effect hole mobility (μh) attained a value as high as 1.7 × 10- 4 cm2/Vs. In this study, one of the important results is that μh increased with the substrate temperature due to the increase in film conductivity. We found that the highest success yield of transistor operation of 38% was obtained from the a-C:N TFTs deposited at a substrate temperature of 290 °C.

Original languageEnglish
Pages (from-to)1015-1018
Number of pages4
JournalDiamond and Related Materials
Volume15
Issue number4-8
DOIs
Publication statusPublished - Apr 2006
Externally publishedYes

Fingerprint

carbon nitrides
Carbon nitride
Amorphous carbon
Carbon films
Amorphous films
Thin films
carbon
thin films
Substrates
Thin film transistors
transistors
Temperature
Nitrogen
temperature
Hole mobility
Carrier transport
nitrogen
Optical band gaps
hole mobility
cyanogen

Keywords

  • Amorphous carbon (a-C)
  • Conductivity
  • Nitrogen doping
  • Thin-film transistors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Characterization of amorphous carbon nitride by bottom-gated thin-film structure. / Hayashi, Yasuhiko; Kamada, N.; Soga, T.; Jimbo, T.

In: Diamond and Related Materials, Vol. 15, No. 4-8, 04.2006, p. 1015-1018.

Research output: Contribution to journalArticle

Hayashi, Yasuhiko ; Kamada, N. ; Soga, T. ; Jimbo, T. / Characterization of amorphous carbon nitride by bottom-gated thin-film structure. In: Diamond and Related Materials. 2006 ; Vol. 15, No. 4-8. pp. 1015-1018.
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