Abstract
RF-DC conversion circuit is one of the most important components in the wireless power transmission technologies. For realizing highly efficient wireless power transmission, it is necessary to design the RF-DC conversion circuit with high conversion efficiency, and the designing method of the circuit is actively investigating. In this paper, we manufacture the GaN schottky barrier diode for a high frequency rectification, and discuss characteristics of the GaN circuit by comparing to the Si circuit. As a result, optimal electrical parameters of the diode are demonstrated for obtaining higher conversion efficiency in the RF-DC conversion circuit.
| Original language | English |
|---|---|
| Title of host publication | IEEE Antennas and Propagation Society, AP-S International Symposium (Digest) |
| Pages | 190-193 |
| Number of pages | 4 |
| Publication status | Published - 2012 |
| Event | 2012 17th International Symposium on Antennas and Propagation, ISAP 2012 - Nagoya, Japan Duration: Oct 29 2012 → Nov 2 2012 |
Other
| Other | 2012 17th International Symposium on Antennas and Propagation, ISAP 2012 |
|---|---|
| Country | Japan |
| City | Nagoya |
| Period | 10/29/12 → 11/2/12 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
Characteristics of RF-DC conversion circuit for wireless power transmission using the low resistance GaN schottky barrier diode. / Fujimori, Kazuhiro; Wagi, Teruhiko; Tsuruta, Kenji; Nogi, Shigeji; Ozawa, Yuichiro; Furukawa, Minoru; Fujiwara, Teruo.
IEEE Antennas and Propagation Society, AP-S International Symposium (Digest). 2012. p. 190-193 6393883.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
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TY - GEN
T1 - Characteristics of RF-DC conversion circuit for wireless power transmission using the low resistance GaN schottky barrier diode
AU - Fujimori, Kazuhiro
AU - Wagi, Teruhiko
AU - Tsuruta, Kenji
AU - Nogi, Shigeji
AU - Ozawa, Yuichiro
AU - Furukawa, Minoru
AU - Fujiwara, Teruo
PY - 2012
Y1 - 2012
N2 - RF-DC conversion circuit is one of the most important components in the wireless power transmission technologies. For realizing highly efficient wireless power transmission, it is necessary to design the RF-DC conversion circuit with high conversion efficiency, and the designing method of the circuit is actively investigating. In this paper, we manufacture the GaN schottky barrier diode for a high frequency rectification, and discuss characteristics of the GaN circuit by comparing to the Si circuit. As a result, optimal electrical parameters of the diode are demonstrated for obtaining higher conversion efficiency in the RF-DC conversion circuit.
AB - RF-DC conversion circuit is one of the most important components in the wireless power transmission technologies. For realizing highly efficient wireless power transmission, it is necessary to design the RF-DC conversion circuit with high conversion efficiency, and the designing method of the circuit is actively investigating. In this paper, we manufacture the GaN schottky barrier diode for a high frequency rectification, and discuss characteristics of the GaN circuit by comparing to the Si circuit. As a result, optimal electrical parameters of the diode are demonstrated for obtaining higher conversion efficiency in the RF-DC conversion circuit.
UR - http://www.scopus.com/inward/record.url?scp=84873164792&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84873164792&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:84873164792
SN - 9784885522703
SP - 190
EP - 193
BT - IEEE Antennas and Propagation Society, AP-S International Symposium (Digest)
ER -