Characteristics of RF-DC conversion circuit for wireless power transmission using the low resistance GaN schottky barrier diode

Kazuhiro Fujimori, Teruhiko Wagi, Kenji Tsuruta, Shigeji Nogi, Yuichiro Ozawa, Minoru Furukawa, Teruo Fujiwara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

RF-DC conversion circuit is one of the most important components in the wireless power transmission technologies. For realizing highly efficient wireless power transmission, it is necessary to design the RF-DC conversion circuit with high conversion efficiency, and the designing method of the circuit is actively investigating. In this paper, we manufacture the GaN schottky barrier diode for a high frequency rectification, and discuss characteristics of the GaN circuit by comparing to the Si circuit. As a result, optimal electrical parameters of the diode are demonstrated for obtaining higher conversion efficiency in the RF-DC conversion circuit.

Original languageEnglish
Title of host publicationIEEE Antennas and Propagation Society, AP-S International Symposium (Digest)
Pages190-193
Number of pages4
Publication statusPublished - 2012
Event2012 17th International Symposium on Antennas and Propagation, ISAP 2012 - Nagoya, Japan
Duration: Oct 29 2012Nov 2 2012

Other

Other2012 17th International Symposium on Antennas and Propagation, ISAP 2012
CountryJapan
CityNagoya
Period10/29/1211/2/12

Fingerprint

Schottky barrier diodes
Power transmission
Networks (circuits)
Conversion efficiency
Diodes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Fujimori, K., Wagi, T., Tsuruta, K., Nogi, S., Ozawa, Y., Furukawa, M., & Fujiwara, T. (2012). Characteristics of RF-DC conversion circuit for wireless power transmission using the low resistance GaN schottky barrier diode. In IEEE Antennas and Propagation Society, AP-S International Symposium (Digest) (pp. 190-193). [6393883]

Characteristics of RF-DC conversion circuit for wireless power transmission using the low resistance GaN schottky barrier diode. / Fujimori, Kazuhiro; Wagi, Teruhiko; Tsuruta, Kenji; Nogi, Shigeji; Ozawa, Yuichiro; Furukawa, Minoru; Fujiwara, Teruo.

IEEE Antennas and Propagation Society, AP-S International Symposium (Digest). 2012. p. 190-193 6393883.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Fujimori, K, Wagi, T, Tsuruta, K, Nogi, S, Ozawa, Y, Furukawa, M & Fujiwara, T 2012, Characteristics of RF-DC conversion circuit for wireless power transmission using the low resistance GaN schottky barrier diode. in IEEE Antennas and Propagation Society, AP-S International Symposium (Digest)., 6393883, pp. 190-193, 2012 17th International Symposium on Antennas and Propagation, ISAP 2012, Nagoya, Japan, 10/29/12.
Fujimori K, Wagi T, Tsuruta K, Nogi S, Ozawa Y, Furukawa M et al. Characteristics of RF-DC conversion circuit for wireless power transmission using the low resistance GaN schottky barrier diode. In IEEE Antennas and Propagation Society, AP-S International Symposium (Digest). 2012. p. 190-193. 6393883
Fujimori, Kazuhiro ; Wagi, Teruhiko ; Tsuruta, Kenji ; Nogi, Shigeji ; Ozawa, Yuichiro ; Furukawa, Minoru ; Fujiwara, Teruo. / Characteristics of RF-DC conversion circuit for wireless power transmission using the low resistance GaN schottky barrier diode. IEEE Antennas and Propagation Society, AP-S International Symposium (Digest). 2012. pp. 190-193
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