Abstract
RF-DC conversion circuit is one of the most important components in the wireless power transmission technologies. For realizing highly efficient wireless power transmission, it is necessary to design the RF-DC conversion circuit with high conversion efficiency, and the designing method of the circuit is actively investigating. In this paper, we manufacture the GaN schottky barrier diode for a high frequency rectification, and discuss characteristics of the GaN circuit by comparing to the Si circuit. As a result, optimal electrical parameters of the diode are demonstrated for obtaining higher conversion efficiency in the RF-DC conversion circuit.
| Original language | English |
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| Title of host publication | Conference Proceedings of the 2012 International Symposium on Antennas and Propagation, ISAP 2012 |
| Pages | 190-193 |
| Number of pages | 4 |
| Publication status | Published - Dec 1 2012 |
| Event | 2012 17th International Symposium on Antennas and Propagation, ISAP 2012 - Nagoya, Japan Duration: Oct 29 2012 → Nov 2 2012 |
Publication series
| Name | IEEE Antennas and Propagation Society, AP-S International Symposium (Digest) |
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| ISSN (Print) | 1522-3965 |
Other
| Other | 2012 17th International Symposium on Antennas and Propagation, ISAP 2012 |
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| Country | Japan |
| City | Nagoya |
| Period | 10/29/12 → 11/2/12 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
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Cite this
Fujimori, K., Wagi, T., Tsuruta, K., Nogi, S., Ozawa, Y., Furukawa, M., & Fujiwara, T. (2012). Characteristics of RF-DC conversion circuit for wireless power transmission using the low resistance GaN schottky barrier diode. In Conference Proceedings of the 2012 International Symposium on Antennas and Propagation, ISAP 2012 (pp. 190-193). [6393883] (IEEE Antennas and Propagation Society, AP-S International Symposium (Digest)).