Characteristics of RF-DC conversion circuit for wireless power transmission using the low resistance GaN schottky barrier diode

Kazuhiro Fujimori; Teruhiko Wagi; Kenji Tsuruta; Shigeji Nogi; Yuichiro Ozawa; Minoru Furukawa; Teruo Fujiwara

Characteristics of RF-DC conversion circuit for wireless power transmission using the low resistance GaN schottky barrier diode

Kazuhiro Fujimori, Teruhiko Wagi, Kenji Tsuruta, Shigeji Nogi, Yuichiro Ozawa, Minoru Furukawa, Teruo Fujiwara

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

RF-DC conversion circuit is one of the most important components in the wireless power transmission technologies. For realizing highly efficient wireless power transmission, it is necessary to design the RF-DC conversion circuit with high conversion efficiency, and the designing method of the circuit is actively investigating. In this paper, we manufacture the GaN schottky barrier diode for a high frequency rectification, and discuss characteristics of the GaN circuit by comparing to the Si circuit. As a result, optimal electrical parameters of the diode are demonstrated for obtaining higher conversion efficiency in the RF-DC conversion circuit.

Original language	English
Title of host publication	Conference Proceedings of the 2012 International Symposium on Antennas and Propagation, ISAP 2012
Pages	190-193
Number of pages	4
Publication status	Published - Dec 1 2012
Event	2012 17th International Symposium on Antennas and Propagation, ISAP 2012 - Nagoya, Japan Duration: Oct 29 2012 → Nov 2 2012

Publication series

Name	IEEE Antennas and Propagation Society, AP-S International Symposium (Digest)
ISSN (Print)	1522-3965

Other

Other	2012 17th International Symposium on Antennas and Propagation, ISAP 2012
Country	Japan
City	Nagoya
Period	10/29/12 → 11/2/12

ASJC Scopus subject areas

Electrical and Electronic Engineering

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Fujimori, K., Wagi, T., Tsuruta, K., Nogi, S., Ozawa, Y., Furukawa, M., & Fujiwara, T. (2012). Characteristics of RF-DC conversion circuit for wireless power transmission using the low resistance GaN schottky barrier diode. In Conference Proceedings of the 2012 International Symposium on Antennas and Propagation, ISAP 2012 (pp. 190-193). [6393883] (IEEE Antennas and Propagation Society, AP-S International Symposium (Digest)).

Characteristics of RF-DC conversion circuit for wireless power transmission using the low resistance GaN schottky barrier diode. / Fujimori, Kazuhiro; Wagi, Teruhiko; Tsuruta, Kenji; Nogi, Shigeji; Ozawa, Yuichiro; Furukawa, Minoru; Fujiwara, Teruo.

Conference Proceedings of the 2012 International Symposium on Antennas and Propagation, ISAP 2012. 2012. p. 190-193 6393883 (IEEE Antennas and Propagation Society, AP-S International Symposium (Digest)).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Fujimori, K, Wagi, T, Tsuruta, K, Nogi, S, Ozawa, Y, Furukawa, M & Fujiwara, T 2012, Characteristics of RF-DC conversion circuit for wireless power transmission using the low resistance GaN schottky barrier diode. in Conference Proceedings of the 2012 International Symposium on Antennas and Propagation, ISAP 2012., 6393883, IEEE Antennas and Propagation Society, AP-S International Symposium (Digest), pp. 190-193, 2012 17th International Symposium on Antennas and Propagation, ISAP 2012, Nagoya, Japan, 10/29/12.

Fujimori K, Wagi T, Tsuruta K, Nogi S, Ozawa Y, Furukawa M et al. Characteristics of RF-DC conversion circuit for wireless power transmission using the low resistance GaN schottky barrier diode. In Conference Proceedings of the 2012 International Symposium on Antennas and Propagation, ISAP 2012. 2012. p. 190-193. 6393883. (IEEE Antennas and Propagation Society, AP-S International Symposium (Digest)).

Fujimori, Kazuhiro ; Wagi, Teruhiko ; Tsuruta, Kenji ; Nogi, Shigeji ; Ozawa, Yuichiro ; Furukawa, Minoru ; Fujiwara, Teruo. / Characteristics of RF-DC conversion circuit for wireless power transmission using the low resistance GaN schottky barrier diode. Conference Proceedings of the 2012 International Symposium on Antennas and Propagation, ISAP 2012. 2012. pp. 190-193 (IEEE Antennas and Propagation Society, AP-S International Symposium (Digest)).

@inproceedings{7e83a610f1cc46a99464d5dc403a1813,

title = "Characteristics of RF-DC conversion circuit for wireless power transmission using the low resistance GaN schottky barrier diode",

abstract = "RF-DC conversion circuit is one of the most important components in the wireless power transmission technologies. For realizing highly efficient wireless power transmission, it is necessary to design the RF-DC conversion circuit with high conversion efficiency, and the designing method of the circuit is actively investigating. In this paper, we manufacture the GaN schottky barrier diode for a high frequency rectification, and discuss characteristics of the GaN circuit by comparing to the Si circuit. As a result, optimal electrical parameters of the diode are demonstrated for obtaining higher conversion efficiency in the RF-DC conversion circuit.",

author = "Kazuhiro Fujimori and Teruhiko Wagi and Kenji Tsuruta and Shigeji Nogi and Yuichiro Ozawa and Minoru Furukawa and Teruo Fujiwara",

year = "2012",

month = dec,

day = "1",

language = "English",

isbn = "9784885522703",

series = "IEEE Antennas and Propagation Society, AP-S International Symposium (Digest)",

pages = "190--193",

booktitle = "Conference Proceedings of the 2012 International Symposium on Antennas and Propagation, ISAP 2012",

note = "2012 17th International Symposium on Antennas and Propagation, ISAP 2012 ; Conference date: 29-10-2012 Through 02-11-2012",

}

TY - GEN

T1 - Characteristics of RF-DC conversion circuit for wireless power transmission using the low resistance GaN schottky barrier diode

AU - Fujimori, Kazuhiro

AU - Wagi, Teruhiko

AU - Tsuruta, Kenji

AU - Nogi, Shigeji

AU - Ozawa, Yuichiro

AU - Furukawa, Minoru

AU - Fujiwara, Teruo

PY - 2012/12/1

Y1 - 2012/12/1

N2 - RF-DC conversion circuit is one of the most important components in the wireless power transmission technologies. For realizing highly efficient wireless power transmission, it is necessary to design the RF-DC conversion circuit with high conversion efficiency, and the designing method of the circuit is actively investigating. In this paper, we manufacture the GaN schottky barrier diode for a high frequency rectification, and discuss characteristics of the GaN circuit by comparing to the Si circuit. As a result, optimal electrical parameters of the diode are demonstrated for obtaining higher conversion efficiency in the RF-DC conversion circuit.

AB - RF-DC conversion circuit is one of the most important components in the wireless power transmission technologies. For realizing highly efficient wireless power transmission, it is necessary to design the RF-DC conversion circuit with high conversion efficiency, and the designing method of the circuit is actively investigating. In this paper, we manufacture the GaN schottky barrier diode for a high frequency rectification, and discuss characteristics of the GaN circuit by comparing to the Si circuit. As a result, optimal electrical parameters of the diode are demonstrated for obtaining higher conversion efficiency in the RF-DC conversion circuit.

UR - http://www.scopus.com/inward/record.url?scp=84873164792&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84873164792&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84873164792

SN - 9784885522703

T3 - IEEE Antennas and Propagation Society, AP-S International Symposium (Digest)

SP - 190

EP - 193

BT - Conference Proceedings of the 2012 International Symposium on Antennas and Propagation, ISAP 2012

T2 - 2012 17th International Symposium on Antennas and Propagation, ISAP 2012

Y2 - 29 October 2012 through 2 November 2012

ER -