Characteristics of RF-DC conversion circuit for wireless power transmission using the low resistance GaN schottky barrier diode

Kazuhiro Fujimori, Teruhiko Wagi, Kenji Tsuruta, Shigeji Nogi, Yuichiro Ozawa, Minoru Furukawa, Teruo Fujiwara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

RF-DC conversion circuit is one of the most important components in the wireless power transmission technologies. For realizing highly efficient wireless power transmission, it is necessary to design the RF-DC conversion circuit with high conversion efficiency, and the designing method of the circuit is actively investigating. In this paper, we manufacture the GaN schottky barrier diode for a high frequency rectification, and discuss characteristics of the GaN circuit by comparing to the Si circuit. As a result, optimal electrical parameters of the diode are demonstrated for obtaining higher conversion efficiency in the RF-DC conversion circuit.

Original languageEnglish
Title of host publicationConference Proceedings of the 2012 International Symposium on Antennas and Propagation, ISAP 2012
Pages190-193
Number of pages4
Publication statusPublished - Dec 1 2012
Event2012 17th International Symposium on Antennas and Propagation, ISAP 2012 - Nagoya, Japan
Duration: Oct 29 2012Nov 2 2012

Publication series

NameIEEE Antennas and Propagation Society, AP-S International Symposium (Digest)
ISSN (Print)1522-3965

Other

Other2012 17th International Symposium on Antennas and Propagation, ISAP 2012
CountryJapan
CityNagoya
Period10/29/1211/2/12

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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