TY - GEN
T1 - Characteristics of RF-DC conversion circuit for wireless power transmission using the low resistance GaN schottky barrier diode
AU - Fujimori, Kazuhiro
AU - Wagi, Teruhiko
AU - Tsuruta, Kenji
AU - Nogi, Shigeji
AU - Ozawa, Yuichiro
AU - Furukawa, Minoru
AU - Fujiwara, Teruo
PY - 2012/12/1
Y1 - 2012/12/1
N2 - RF-DC conversion circuit is one of the most important components in the wireless power transmission technologies. For realizing highly efficient wireless power transmission, it is necessary to design the RF-DC conversion circuit with high conversion efficiency, and the designing method of the circuit is actively investigating. In this paper, we manufacture the GaN schottky barrier diode for a high frequency rectification, and discuss characteristics of the GaN circuit by comparing to the Si circuit. As a result, optimal electrical parameters of the diode are demonstrated for obtaining higher conversion efficiency in the RF-DC conversion circuit.
AB - RF-DC conversion circuit is one of the most important components in the wireless power transmission technologies. For realizing highly efficient wireless power transmission, it is necessary to design the RF-DC conversion circuit with high conversion efficiency, and the designing method of the circuit is actively investigating. In this paper, we manufacture the GaN schottky barrier diode for a high frequency rectification, and discuss characteristics of the GaN circuit by comparing to the Si circuit. As a result, optimal electrical parameters of the diode are demonstrated for obtaining higher conversion efficiency in the RF-DC conversion circuit.
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M3 - Conference contribution
AN - SCOPUS:84873164792
SN - 9784885522703
T3 - IEEE Antennas and Propagation Society, AP-S International Symposium (Digest)
SP - 190
EP - 193
BT - Conference Proceedings of the 2012 International Symposium on Antennas and Propagation, ISAP 2012
T2 - 2012 17th International Symposium on Antennas and Propagation, ISAP 2012
Y2 - 29 October 2012 through 2 November 2012
ER -