Characteristics of field-effect transistors using the one-dimensional extended hydrocarbon [7]phenacene

Yasuyuki Sugawara, Yumiko Kaji, Keiko Ogawa, Ritsuko Eguchi, Shohei Oikawa, Hiroyuki Gohda, Akihiko Fujiwara, Yoshihiro Kubozono

    Research output: Contribution to journalArticlepeer-review

    30 Citations (Scopus)

    Abstract

    Field-effect transistors (FETs) with solid gate dielectrics are fabricated with thin films of the one-dimensional (1D) extended hydrocarbon [7]phenacene, which contains seven benzene rings. p-channel FET characteristics are observed for these FETs, with a mobility of 0.75cm2 V-1 s -1 at 100 Torr of O2. The O2 gas-sensing effect is examined for the [7]phenacene FET and for the 1D hydrocarbon picene FET. These FETs' trap density and contact resistance are investigated with the multiple shallow trap and release model and the transfer line method. Unlike picene FETs, [7]phenacene FETs have few charge traps and are therefore air-stable.

    Original languageEnglish
    Article number013303
    JournalApplied Physics Letters
    Volume98
    Issue number1
    DOIs
    Publication statusPublished - Jan 3 2011

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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