Characteristics of field-effect transistors using the one-dimensional extended hydrocarbon [7]phenacene

Yasuyuki Sugawara, Yumiko Kaji, Keiko Ogawa, Ritsuko Eguchi, Shohei Oikawa, Hiroyuki Gohda, Akihiko Fujiwara, Yoshihiro Kubozono

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

Field-effect transistors (FETs) with solid gate dielectrics are fabricated with thin films of the one-dimensional (1D) extended hydrocarbon [7]phenacene, which contains seven benzene rings. p-channel FET characteristics are observed for these FETs, with a mobility of 0.75cm2 V-1 s -1 at 100 Torr of O2. The O2 gas-sensing effect is examined for the [7]phenacene FET and for the 1D hydrocarbon picene FET. These FETs' trap density and contact resistance are investigated with the multiple shallow trap and release model and the transfer line method. Unlike picene FETs, [7]phenacene FETs have few charge traps and are therefore air-stable.

Original languageEnglish
Article number013303
JournalApplied Physics Letters
Volume98
Issue number1
DOIs
Publication statusPublished - Jan 3 2011

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field effect transistors
hydrocarbons
traps
contact resistance
benzene
rings
air
thin films
gases

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Characteristics of field-effect transistors using the one-dimensional extended hydrocarbon [7]phenacene. / Sugawara, Yasuyuki; Kaji, Yumiko; Ogawa, Keiko; Eguchi, Ritsuko; Oikawa, Shohei; Gohda, Hiroyuki; Fujiwara, Akihiko; Kubozono, Yoshihiro.

In: Applied Physics Letters, Vol. 98, No. 1, 013303, 03.01.2011.

Research output: Contribution to journalArticle

Sugawara, Yasuyuki ; Kaji, Yumiko ; Ogawa, Keiko ; Eguchi, Ritsuko ; Oikawa, Shohei ; Gohda, Hiroyuki ; Fujiwara, Akihiko ; Kubozono, Yoshihiro. / Characteristics of field-effect transistors using the one-dimensional extended hydrocarbon [7]phenacene. In: Applied Physics Letters. 2011 ; Vol. 98, No. 1.
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