Characteristics of field-effect transistors using the one-dimensional extended hydrocarbon [7]phenacene

Yasuyuki Sugawara, Yumiko Kaji, Keiko Ogawa, Ritsuko Eguchi, Shohei Oikawa, Hiroyuki Gohda, Akihiko Fujiwara, Yoshihiro Kubozono

Research output: Contribution to journalArticle

30 Citations (Scopus)


Field-effect transistors (FETs) with solid gate dielectrics are fabricated with thin films of the one-dimensional (1D) extended hydrocarbon [7]phenacene, which contains seven benzene rings. p-channel FET characteristics are observed for these FETs, with a mobility of 0.75cm2 V-1 s -1 at 100 Torr of O2. The O2 gas-sensing effect is examined for the [7]phenacene FET and for the 1D hydrocarbon picene FET. These FETs' trap density and contact resistance are investigated with the multiple shallow trap and release model and the transfer line method. Unlike picene FETs, [7]phenacene FETs have few charge traps and are therefore air-stable.

Original languageEnglish
Article number013303
JournalApplied Physics Letters
Issue number1
Publication statusPublished - Jan 3 2011


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this