Characteristics of [6]phenacene thin film field-effect transistor

Noriko Komura; Hidenori Goto; Xuexia He; Hiroki Mitamura; Ritsuko Eguchi; Yumiko Kaji; Hideki Okamoto; Yasuyuki Sugawara; Shin Gohda; Kaori Sato; Yoshihiro Kubozono

doi:10.1063/1.4747201

Characteristics of [6]phenacene thin film field-effect transistor

Noriko Komura, Hidenori Goto, Xuexia He, Hiroki Mitamura, Ritsuko Eguchi, Yumiko Kaji, Hideki Okamoto, Yasuyuki Sugawara, Shin Gohda, Kaori Sato, Yoshihiro Kubozono

Research output: Contribution to journal › Article › peer-review

37 Citations (Scopus)

Abstract

Transistor characteristics are studied for field-effect transistors (FETs) with thin films of [6]phenacene, which has six benzene rings and W-shape structure. The molecular alignment preferable for FET transport is found to be formed in [6]phenacene thin films. The transistor shows clear p-channel FET characteristics with field-effect mobility μ as high as 3.7 cm ² V ^-1 s ^-1. The similar O ₂ sensing properties to picene FET are observed in [6]phenacene thin film FET. The bias stress properties are observed in [6]phenacene thin film FET. The pulse-voltage application suppresses the bias-stress effect and it enables a continuous O ₂ sensing in [6]phenacene FET.

Original language	English
Article number	083301
Journal	Applied Physics Letters
Volume	101
Issue number	8
DOIs	https://doi.org/10.1063/1.4747201
Publication status	Published - Aug 20 2012

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Characteristics of [6]phenacene thin film field-effect transistor",

abstract = "Transistor characteristics are studied for field-effect transistors (FETs) with thin films of [6]phenacene, which has six benzene rings and W-shape structure. The molecular alignment preferable for FET transport is found to be formed in [6]phenacene thin films. The transistor shows clear p-channel FET characteristics with field-effect mobility μ as high as 3.7 cm 2 V -1 s -1. The similar O 2 sensing properties to picene FET are observed in [6]phenacene thin film FET. The bias stress properties are observed in [6]phenacene thin film FET. The pulse-voltage application suppresses the bias-stress effect and it enables a continuous O 2 sensing in [6]phenacene FET.",

author = "Noriko Komura and Hidenori Goto and Xuexia He and Hiroki Mitamura and Ritsuko Eguchi and Yumiko Kaji and Hideki Okamoto and Yasuyuki Sugawara and Shin Gohda and Kaori Sato and Yoshihiro Kubozono",

note = "Funding Information: This work was partly supported by a Grant-in-Aid (18340104 and 20045012) from MEXT, Japan. The study on synthesis of [6]phenecene was supported by R&D program [A-STEP (AS231Z01256D)] from Japan Science and Technology Agency (JST), Japan. The study on O sensing was partly supported by R&D program for Regional Innovation Creation from Tohoku Bureau of Economy, Trade and Industry of METI, Japan and by R&D project for Gas Barrier Film from Okayama Prefecture, Japan. 2",

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doi = "10.1063/1.4747201",

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T1 - Characteristics of [6]phenacene thin film field-effect transistor

AU - Komura, Noriko

AU - Goto, Hidenori

AU - He, Xuexia

AU - Mitamura, Hiroki

AU - Eguchi, Ritsuko

AU - Kaji, Yumiko

AU - Okamoto, Hideki

AU - Sugawara, Yasuyuki

AU - Gohda, Shin

AU - Sato, Kaori

AU - Kubozono, Yoshihiro

N1 - Funding Information: This work was partly supported by a Grant-in-Aid (18340104 and 20045012) from MEXT, Japan. The study on synthesis of [6]phenecene was supported by R&D program [A-STEP (AS231Z01256D)] from Japan Science and Technology Agency (JST), Japan. The study on O sensing was partly supported by R&D program for Regional Innovation Creation from Tohoku Bureau of Economy, Trade and Industry of METI, Japan and by R&D project for Gas Barrier Film from Okayama Prefecture, Japan. 2

PY - 2012/8/20

Y1 - 2012/8/20

N2 - Transistor characteristics are studied for field-effect transistors (FETs) with thin films of [6]phenacene, which has six benzene rings and W-shape structure. The molecular alignment preferable for FET transport is found to be formed in [6]phenacene thin films. The transistor shows clear p-channel FET characteristics with field-effect mobility μ as high as 3.7 cm 2 V -1 s -1. The similar O 2 sensing properties to picene FET are observed in [6]phenacene thin film FET. The bias stress properties are observed in [6]phenacene thin film FET. The pulse-voltage application suppresses the bias-stress effect and it enables a continuous O 2 sensing in [6]phenacene FET.

AB - Transistor characteristics are studied for field-effect transistors (FETs) with thin films of [6]phenacene, which has six benzene rings and W-shape structure. The molecular alignment preferable for FET transport is found to be formed in [6]phenacene thin films. The transistor shows clear p-channel FET characteristics with field-effect mobility μ as high as 3.7 cm 2 V -1 s -1. The similar O 2 sensing properties to picene FET are observed in [6]phenacene thin film FET. The bias stress properties are observed in [6]phenacene thin film FET. The pulse-voltage application suppresses the bias-stress effect and it enables a continuous O 2 sensing in [6]phenacene FET.

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Characteristics of [6]phenacene thin film field-effect transistor

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