Abstract
Transistor characteristics are studied for field-effect transistors (FETs) with thin films of [6]phenacene, which has six benzene rings and W-shape structure. The molecular alignment preferable for FET transport is found to be formed in [6]phenacene thin films. The transistor shows clear p-channel FET characteristics with field-effect mobility μ as high as 3.7 cm 2 V -1 s -1. The similar O 2 sensing properties to picene FET are observed in [6]phenacene thin film FET. The bias stress properties are observed in [6]phenacene thin film FET. The pulse-voltage application suppresses the bias-stress effect and it enables a continuous O 2 sensing in [6]phenacene FET.
Original language | English |
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Article number | 083301 |
Journal | Applied Physics Letters |
Volume | 101 |
Issue number | 8 |
DOIs | |
Publication status | Published - Aug 20 2012 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)