Transistor characteristics are studied for field-effect transistors (FETs) with thin films of phenacene, which has six benzene rings and W-shape structure. The molecular alignment preferable for FET transport is found to be formed in phenacene thin films. The transistor shows clear p-channel FET characteristics with field-effect mobility μ as high as 3.7 cm 2 V -1 s -1. The similar O 2 sensing properties to picene FET are observed in phenacene thin film FET. The bias stress properties are observed in phenacene thin film FET. The pulse-voltage application suppresses the bias-stress effect and it enables a continuous O 2 sensing in phenacene FET.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)