Characteristics of [6]phenacene thin film field-effect transistor

Noriko Komura, Hidenori Goto, Xuexia He, Hiroki Mitamura, Ritsuko Eguchi, Yumiko Kaji, Hideki Okamoto, Yasuyuki Sugawara, Shin Gohda, Kaori Sato, Yoshihiro Kubozono

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

Transistor characteristics are studied for field-effect transistors (FETs) with thin films of [6]phenacene, which has six benzene rings and W-shape structure. The molecular alignment preferable for FET transport is found to be formed in [6]phenacene thin films. The transistor shows clear p-channel FET characteristics with field-effect mobility μ as high as 3.7 cm 2 V -1 s -1. The similar O 2 sensing properties to picene FET are observed in [6]phenacene thin film FET. The bias stress properties are observed in [6]phenacene thin film FET. The pulse-voltage application suppresses the bias-stress effect and it enables a continuous O 2 sensing in [6]phenacene FET.

Original languageEnglish
Article number083301
JournalApplied Physics Letters
Volume101
Issue number8
DOIs
Publication statusPublished - Aug 20 2012

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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