Characteristics of [6]phenacene thin film field-effect transistor

Noriko Komura; Hidenori Goto; Xuexia He; Hiroki Mitamura; Ritsuko Eguchi; Yumiko Kaji; Hideki Okamoto; Yasuyuki Sugawara; Shin Gohda; Kaori Sato; Yoshihiro Kubozono

doi:10.1063/1.4747201

Characteristics of [6]phenacene thin film field-effect transistor

Noriko Komura, Hidenori Goto, Xuexia He, Hiroki Mitamura, Ritsuko Eguchi, Yumiko Kaji, Hideki Okamoto, Yasuyuki Sugawara, Shin Gohda, Kaori Sato, Yoshihiro Kubozono

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32 Citations (Scopus)

Abstract

Transistor characteristics are studied for field-effect transistors (FETs) with thin films of [6]phenacene, which has six benzene rings and W-shape structure. The molecular alignment preferable for FET transport is found to be formed in [6]phenacene thin films. The transistor shows clear p-channel FET characteristics with field-effect mobility μ as high as 3.7 cm ² V ^-1 s ^-1. The similar O ₂ sensing properties to picene FET are observed in [6]phenacene thin film FET. The bias stress properties are observed in [6]phenacene thin film FET. The pulse-voltage application suppresses the bias-stress effect and it enables a continuous O ₂ sensing in [6]phenacene FET.

Original language	English
Article number	083301
Journal	Applied Physics Letters
Volume	101
Issue number	8
DOIs	https://doi.org/10.1063/1.4747201
Publication status	Published - Aug 20 2012

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ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Cite this

Komura, N., Goto, H., He, X., Mitamura, H., Eguchi, R., Kaji, Y., Okamoto, H., Sugawara, Y., Gohda, S., Sato, K., & Kubozono, Y. (2012). Characteristics of [6]phenacene thin film field-effect transistor. Applied Physics Letters, 101(8), [083301]. https://doi.org/10.1063/1.4747201

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abstract = "Transistor characteristics are studied for field-effect transistors (FETs) with thin films of [6]phenacene, which has six benzene rings and W-shape structure. The molecular alignment preferable for FET transport is found to be formed in [6]phenacene thin films. The transistor shows clear p-channel FET characteristics with field-effect mobility μ as high as 3.7 cm 2 V -1 s -1. The similar O 2 sensing properties to picene FET are observed in [6]phenacene thin film FET. The bias stress properties are observed in [6]phenacene thin film FET. The pulse-voltage application suppresses the bias-stress effect and it enables a continuous O 2 sensing in [6]phenacene FET.",

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AU - Komura, Noriko

AU - Goto, Hidenori

AU - He, Xuexia

AU - Mitamura, Hiroki

AU - Eguchi, Ritsuko

AU - Kaji, Yumiko

AU - Okamoto, Hideki

AU - Sugawara, Yasuyuki

AU - Gohda, Shin

AU - Sato, Kaori

AU - Kubozono, Yoshihiro

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AB - Transistor characteristics are studied for field-effect transistors (FETs) with thin films of [6]phenacene, which has six benzene rings and W-shape structure. The molecular alignment preferable for FET transport is found to be formed in [6]phenacene thin films. The transistor shows clear p-channel FET characteristics with field-effect mobility μ as high as 3.7 cm 2 V -1 s -1. The similar O 2 sensing properties to picene FET are observed in [6]phenacene thin film FET. The bias stress properties are observed in [6]phenacene thin film FET. The pulse-voltage application suppresses the bias-stress effect and it enables a continuous O 2 sensing in [6]phenacene FET.

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10.1063/1.4747201