| Original language | English |
|---|---|
| Pages (from-to) | 1624-1622 |
| Number of pages | 23 |
| Journal | Jpn. J. Appl. Phys. Part1 |
| Volume | Vol.46 |
| Issue number | 4A issue |
| Publication status | Published - 2007 |
Cite this
Characteristic of Strained SiGe Film Preventing Hydrogen from Penetrating into Si Substrate Detected by Spreading Resistance Method. / Yamashita, Yoshifumi.
In: Jpn. J. Appl. Phys. Part1, Vol. Vol.46, No. 4A issue, 2007, p. 1624-1622.Research output: Contribution to journal › Article
Yamashita, Y 2007, 'Characteristic of Strained SiGe Film Preventing Hydrogen from Penetrating into Si Substrate Detected by Spreading Resistance Method', Jpn. J. Appl. Phys. Part1, vol. Vol.46, no. 4A issue, pp. 1624-1622.
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title = "Characteristic of Strained SiGe Film Preventing Hydrogen from Penetrating into Si Substrate Detected by Spreading Resistance Method",
author = "Yoshifumi Yamashita",
year = "2007",
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volume = "Vol.46",
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journal = "Jpn. J. Appl. Phys. Part1",
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T1 - Characteristic of Strained SiGe Film Preventing Hydrogen from Penetrating into Si Substrate Detected by Spreading Resistance Method
AU - Yamashita, Yoshifumi
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VL - Vol.46
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JO - Jpn. J. Appl. Phys. Part1
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