Characteristic of Strained SiGe Film Preventing Hydrogen from Penetrating into Si Substrate Detected by Spreading Resistance Method

Research output: Contribution to journalArticle

2 Citations (Scopus)
Original languageEnglish
Pages (from-to)1624-1622
Number of pages23
JournalJpn. J. Appl. Phys. Part1
VolumeVol.46
Issue number4A issue
Publication statusPublished - 2007

Cite this

@article{6e7c0054b21b4d869eb1fd2425a0603a,
title = "Characteristic of Strained SiGe Film Preventing Hydrogen from Penetrating into Si Substrate Detected by Spreading Resistance Method",
author = "Yoshifumi Yamashita",
year = "2007",
language = "English",
volume = "Vol.46",
pages = "1624--1622",
journal = "Jpn. J. Appl. Phys. Part1",
number = "4A issue",

}

TY - JOUR

T1 - Characteristic of Strained SiGe Film Preventing Hydrogen from Penetrating into Si Substrate Detected by Spreading Resistance Method

AU - Yamashita, Yoshifumi

PY - 2007

Y1 - 2007

M3 - Article

VL - Vol.46

SP - 1624

EP - 1622

JO - Jpn. J. Appl. Phys. Part1

JF - Jpn. J. Appl. Phys. Part1

IS - 4A issue

ER -