CDW tunneling density of states in NbSe3

Toshikazu Ekino, Jun Akimitsu

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

Charge-density-wave (CDW) density of states in quasi-one-dimensional conductor NbSe3 has been examined using low temperature tunneling conductance. Most of the CDW gap structures are expressed by the Gaussian distribution model of the BCS gaps. The two-dimensional anisotropic density of states predicted by Huang and Maki also fits to some of the data. Furthermore we observed the conductance having the perfect zero value at zero bias. These results suggest that the CDW gap in NbSe3 is spatially varied or being anisotropic.

Original languageEnglish
Pages (from-to)1221-1222
Number of pages2
JournalPhysica B: Condensed Matter
Volume194-196
Issue numberPART 1
DOIs
Publication statusPublished - Feb 2 1994
Externally publishedYes

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Charge density waves
Gaussian distribution
normal density functions
conductors
Temperature

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

CDW tunneling density of states in NbSe3 . / Ekino, Toshikazu; Akimitsu, Jun.

In: Physica B: Condensed Matter, Vol. 194-196, No. PART 1, 02.02.1994, p. 1221-1222.

Research output: Contribution to journalArticle

Ekino, Toshikazu ; Akimitsu, Jun. / CDW tunneling density of states in NbSe3 . In: Physica B: Condensed Matter. 1994 ; Vol. 194-196, No. PART 1. pp. 1221-1222.
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