Carrier concentration dependent resonance frequency shift in metamaterial loaded semiconductor

Seiji Myoga, Tomohiro Amemiya, Atsushi Ishikawa, Nobuhiko Nishiyama, Takuo Tanaka, Shigehisa Arai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We experimentally observed that the resonant frequency of the split ring resonator consisting of metal/semiconductor metamaterial varies with the carrier concentrations of the semiconductor layer.

Original languageEnglish
Title of host publicationIEEE Photonic Society 24th Annual Meeting, PHO 2011
Pages785-786
Number of pages2
DOIs
Publication statusPublished - Dec 1 2011
Event24th Annual Meeting on IEEE Photonic Society, PHO 2011 - Arlington, VA, United States
Duration: Oct 9 2011Oct 13 2011

Publication series

NameIEEE Photonic Society 24th Annual Meeting, PHO 2011

Other

Other24th Annual Meeting on IEEE Photonic Society, PHO 2011
CountryUnited States
CityArlington, VA
Period10/9/1110/13/11

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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  • Cite this

    Myoga, S., Amemiya, T., Ishikawa, A., Nishiyama, N., Tanaka, T., & Arai, S. (2011). Carrier concentration dependent resonance frequency shift in metamaterial loaded semiconductor. In IEEE Photonic Society 24th Annual Meeting, PHO 2011 (pp. 785-786). [6110790] (IEEE Photonic Society 24th Annual Meeting, PHO 2011). https://doi.org/10.1109/PHO.2011.6110790