We examined the electromagnetic responses of near-infrared metamaterials consisting of split-ring resonators fabricated on GaInAs semiconductor layers with different doping levels on an InP substrate. The inductancecapacitance (LC) resonances of the split-ring resonators could be controlled entirely from 52 to 63 THz by changing the carrier concentrations from 2.6 × 1018 to 2.7 × 1019 cm-3. Our results show the feasibility of semiconductor-based tunable metamaterials.
|Number of pages||6|
|Journal||Journal of the Optical Society of America B: Optical Physics|
|Publication status||Published - Aug 1 2012|
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Statistical and Nonlinear Physics