Carrier-concentration-dependent resonance frequency shift in a metamaterial loaded semiconductor

Seiji Myoga; Tomohiro Amemiya; Atsushi Ishikawa; Nobuhiko Nishiyama; Takuo Tanaka; Shigehisa Arai

doi:10.1364/JOSAB.29.002110

Carrier-concentration-dependent resonance frequency shift in a metamaterial loaded semiconductor

Seiji Myoga, Tomohiro Amemiya, Atsushi Ishikawa, Nobuhiko Nishiyama, Takuo Tanaka, Shigehisa Arai

Graduate School of Natural Science and Technology

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We examined the electromagnetic responses of near-infrared metamaterials consisting of split-ring resonators fabricated on GaInAs semiconductor layers with different doping levels on an InP substrate. The inductancecapacitance (LC) resonances of the split-ring resonators could be controlled entirely from 52 to 63 THz by changing the carrier concentrations from 2.6 × 10¹⁸ to 2.7 × 10¹⁹ cm^-3. Our results show the feasibility of semiconductor-based tunable metamaterials.

Original language	English
Pages (from-to)	2110-2115
Number of pages	6
Journal	Journal of the Optical Society of America B: Optical Physics
Volume	29
Issue number	8
DOIs	https://doi.org/10.1364/JOSAB.29.002110
Publication status	Published - Aug 1 2012

ASJC Scopus subject areas

Statistical and Nonlinear Physics
Atomic and Molecular Physics, and Optics

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AU - Nishiyama, Nobuhiko

AU - Tanaka, Takuo

AU - Arai, Shigehisa

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AB - We examined the electromagnetic responses of near-infrared metamaterials consisting of split-ring resonators fabricated on GaInAs semiconductor layers with different doping levels on an InP substrate. The inductancecapacitance (LC) resonances of the split-ring resonators could be controlled entirely from 52 to 63 THz by changing the carrier concentrations from 2.6 × 1018 to 2.7 × 1019 cm-3. Our results show the feasibility of semiconductor-based tunable metamaterials.

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Carrier-concentration-dependent resonance frequency shift in a metamaterial loaded semiconductor

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