Carbon reduction and antimony incorporation in InGaAsSb films grown by metalorganic molecular beam epitaxy using tris-dimethylaminoantimony

Manabu Mitsuhara, Tomonari Sato, Norio Yamamoto, Hideki Fukano, Yasuhiro Kondo

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

InGaAsSb layers nearly lattice-matched to InP were grown by metalorganic molecular beam epitaxy using tris-dimethylaminoantimony (TDMASb). Secondary-ion mass spectroscopy measurements revealed that TDMASb is useful not only as an Sb source but also as an additive that reduces the incorporation of C into the film from group-III metalorganic sources. In the room-temperature photoluminescence spectrum, the incorporation of Sb into InGaAs shifted the peak wavelength from 1.66 to 1.75 μm and, simultaneously, the peak intensity of InGaAsSb became more than twice that of InGaAs.

Original languageEnglish
Pages (from-to)3636-3639
Number of pages4
JournalJournal of Crystal Growth
Volume311
Issue number14
DOIs
Publication statusPublished - Jul 1 2009
Externally publishedYes

Keywords

  • A3. Metalorganic molecular beam epitaxy
  • B1. Antimonides
  • B2. Semiconducting III-V materials
  • B2. Semiconducting quarternary alloys

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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