Carbon-Enhanced Annihilation of Thermal Donors and the Generation of Self-Interstitials in Silicon,"jointly worked"

Yoshifumi Yamashita

Research output: Contribution to journal › Article

Original languageEnglish
Pages (from-to)410-415
Number of pages6
JournalProceedings of Kazusa Academia Park forum on the Science and Technology of Silicon Materials
Publication statusPublished - 1997

Cite this

Carbon-Enhanced Annihilation of Thermal Donors and the Generation of Self-Interstitials in Silicon,"jointly worked". / Yamashita, Yoshifumi.

In: Proceedings of Kazusa Academia Park forum on the Science and Technology of Silicon Materials, 1997, p. 410-415.

Research output: Contribution to journal › Article

Yamashita, Y 1997, 'Carbon-Enhanced Annihilation of Thermal Donors and the Generation of Self-Interstitials in Silicon,"jointly worked"', Proceedings of Kazusa Academia Park forum on the Science and Technology of Silicon Materials, pp. 410-415.
Yamashita Y. Carbon-Enhanced Annihilation of Thermal Donors and the Generation of Self-Interstitials in Silicon,"jointly worked". Proceedings of Kazusa Academia Park forum on the Science and Technology of Silicon Materials. 1997;410-415.
Yamashita, Yoshifumi. / Carbon-Enhanced Annihilation of Thermal Donors and the Generation of Self-Interstitials in Silicon,"jointly worked". In: Proceedings of Kazusa Academia Park forum on the Science and Technology of Silicon Materials. 1997 ; pp. 410-415.
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