Boron-incorporated amorphous carbon films deposited by pulsed laser deposition

Xuemin Tian, Mohamad Rusop, Yasuhiko Hayashi, Tetsuo Soga, Takashi Jimbo, Masayoshi Umeno

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Boron-incorporated carbon films (a-C(B)) were deposited on a silicon substrate by pulsed laser deposition (PLD) of a graphite target at room temperature. The boron content was determined by X-ray photoelectron spectroscopy (XPS) to be in the range of 0.2-1.7 at.% in the films. These films were confirmed to be p-type due to the formation of a heterojunction between the a-C(B) carbon film and silicon substrate. The devices of C(B)/n-Si configuration show a maximum [open-circuit voltage] Voc = 0.25 V, and [short-circuit current density] Jsc = 2.1 mA/cm2 under illumination (AM 1.5, 100 mW/cm2).

Original languageEnglish
Pages (from-to)L970-L973
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume41
Issue number9 A/B
DOIs
Publication statusPublished - Sep 15 2002
Externally publishedYes

Keywords

  • Amorphous
  • Boron-incorporated
  • Heterojunction
  • Photovoltaic

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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