Benchmarking of a surface potential based organic thin-film transistor model against C10-DNTT high performance test devices

T. K. Maiti, T. Hayashi, H. Mori, M. J. Kang, K. Takimiya, M. Miura-Mattausch, H. J. Mattausch

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

In this paper, a surface potential based compact model for organic thin-film transistors (OTFTs) including both tail and deep trap states across the band gap is presented and benchmarked against measured data from high-performance dinaphtho thieno thiophene (C10-DNTT) based test devices. This model can accurately describe the OTFT test-structure current from week to strong inversion regime.

Original languageEnglish
Title of host publication2013 IEEE International Conference on Microelectronic Test Structures, ICMTS 2013 - Conference Proceedings
Pages157-161
Number of pages5
DOIs
Publication statusPublished - 2013
Externally publishedYes
Event2013 International Conference on Microelectronic Test Structures, ICMTS 2013 - Osaka, Japan
Duration: Mar 25 2013Mar 28 2013

Publication series

NameIEEE International Conference on Microelectronic Test Structures

Other

Other2013 International Conference on Microelectronic Test Structures, ICMTS 2013
CountryJapan
CityOsaka
Period3/25/133/28/13

Keywords

  • Organic Thin-Film Transistors
  • compact model
  • surface potential
  • traps

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Maiti, T. K., Hayashi, T., Mori, H., Kang, M. J., Takimiya, K., Miura-Mattausch, M., & Mattausch, H. J. (2013). Benchmarking of a surface potential based organic thin-film transistor model against C10-DNTT high performance test devices. In 2013 IEEE International Conference on Microelectronic Test Structures, ICMTS 2013 - Conference Proceedings (pp. 157-161). [6528164] (IEEE International Conference on Microelectronic Test Structures). https://doi.org/10.1109/ICMTS.2013.6528164