Benchmarking of a surface potential based organic thin-film transistor model against C10-DNTT high performance test devices

T. K. Maiti; T. Hayashi; H. Mori; M. J. Kang; K. Takimiya; M. Miura-Mattausch; H. J. Mattausch

doi:10.1109/ICMTS.2013.6528164

Benchmarking of a surface potential based organic thin-film transistor model against C₁₀-DNTT high performance test devices

T. K. Maiti, T. Hayashi, H. Mori, M. J. Kang, K. Takimiya, M. Miura-Mattausch, H. J. Mattausch

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Citations (Scopus)

Abstract

In this paper, a surface potential based compact model for organic thin-film transistors (OTFTs) including both tail and deep trap states across the band gap is presented and benchmarked against measured data from high-performance dinaphtho thieno thiophene (C₁₀-DNTT) based test devices. This model can accurately describe the OTFT test-structure current from week to strong inversion regime.

Original language	English
Title of host publication	2013 IEEE International Conference on Microelectronic Test Structures, ICMTS 2013 - Conference Proceedings
Pages	157-161
Number of pages	5
DOIs	https://doi.org/10.1109/ICMTS.2013.6528164
Publication status	Published - 2013
Externally published	Yes
Event	2013 International Conference on Microelectronic Test Structures, ICMTS 2013 - Osaka, Japan Duration: Mar 25 2013 → Mar 28 2013

Publication series

Name	IEEE International Conference on Microelectronic Test Structures

Other

Other	2013 International Conference on Microelectronic Test Structures, ICMTS 2013
Country/Territory	Japan
City	Osaka
Period	3/25/13 → 3/28/13

Keywords

Organic Thin-Film Transistors
compact model
surface potential
traps

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/ICMTS.2013.6528164

Cite this

Maiti, T. K., Hayashi, T., Mori, H., Kang, M. J., Takimiya, K., Miura-Mattausch, M., & Mattausch, H. J. (2013). Benchmarking of a surface potential based organic thin-film transistor model against C₁₀-DNTT high performance test devices. In 2013 IEEE International Conference on Microelectronic Test Structures, ICMTS 2013 - Conference Proceedings (pp. 157-161). [6528164] (IEEE International Conference on Microelectronic Test Structures). https://doi.org/10.1109/ICMTS.2013.6528164

Benchmarking of a surface potential based organic thin-film transistor model against C₁₀-DNTT high performance test devices. / Maiti, T. K.; Hayashi, T.; Mori, H. et al.

2013 IEEE International Conference on Microelectronic Test Structures, ICMTS 2013 - Conference Proceedings. 2013. p. 157-161 6528164 (IEEE International Conference on Microelectronic Test Structures).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Maiti, TK, Hayashi, T, Mori, H, Kang, MJ, Takimiya, K, Miura-Mattausch, M & Mattausch, HJ 2013, Benchmarking of a surface potential based organic thin-film transistor model against C₁₀-DNTT high performance test devices. in 2013 IEEE International Conference on Microelectronic Test Structures, ICMTS 2013 - Conference Proceedings., 6528164, IEEE International Conference on Microelectronic Test Structures, pp. 157-161, 2013 International Conference on Microelectronic Test Structures, ICMTS 2013, Osaka, Japan, 3/25/13. https://doi.org/10.1109/ICMTS.2013.6528164

Maiti TK, Hayashi T, Mori H, Kang MJ, Takimiya K, Miura-Mattausch M et al. Benchmarking of a surface potential based organic thin-film transistor model against C₁₀-DNTT high performance test devices. In 2013 IEEE International Conference on Microelectronic Test Structures, ICMTS 2013 - Conference Proceedings. 2013. p. 157-161. 6528164. (IEEE International Conference on Microelectronic Test Structures). doi: 10.1109/ICMTS.2013.6528164

@inproceedings{1b31117de7b24706aa8180d16b2993a7,

title = "Benchmarking of a surface potential based organic thin-film transistor model against C10-DNTT high performance test devices",

abstract = "In this paper, a surface potential based compact model for organic thin-film transistors (OTFTs) including both tail and deep trap states across the band gap is presented and benchmarked against measured data from high-performance dinaphtho thieno thiophene (C10-DNTT) based test devices. This model can accurately describe the OTFT test-structure current from week to strong inversion regime.",

keywords = "Organic Thin-Film Transistors, compact model, surface potential, traps",

author = "Maiti, {T. K.} and T. Hayashi and H. Mori and Kang, {M. J.} and K. Takimiya and M. Miura-Mattausch and Mattausch, {H. J.}",

year = "2013",

doi = "10.1109/ICMTS.2013.6528164",

language = "English",

isbn = "9781467348485",

series = "IEEE International Conference on Microelectronic Test Structures",

pages = "157--161",

booktitle = "2013 IEEE International Conference on Microelectronic Test Structures, ICMTS 2013 - Conference Proceedings",

note = "2013 International Conference on Microelectronic Test Structures, ICMTS 2013 ; Conference date: 25-03-2013 Through 28-03-2013",

}

TY - GEN

T1 - Benchmarking of a surface potential based organic thin-film transistor model against C10-DNTT high performance test devices

AU - Maiti, T. K.

AU - Hayashi, T.

AU - Mori, H.

AU - Kang, M. J.

AU - Takimiya, K.

AU - Miura-Mattausch, M.

AU - Mattausch, H. J.

PY - 2013

Y1 - 2013

N2 - In this paper, a surface potential based compact model for organic thin-film transistors (OTFTs) including both tail and deep trap states across the band gap is presented and benchmarked against measured data from high-performance dinaphtho thieno thiophene (C10-DNTT) based test devices. This model can accurately describe the OTFT test-structure current from week to strong inversion regime.

AB - In this paper, a surface potential based compact model for organic thin-film transistors (OTFTs) including both tail and deep trap states across the band gap is presented and benchmarked against measured data from high-performance dinaphtho thieno thiophene (C10-DNTT) based test devices. This model can accurately describe the OTFT test-structure current from week to strong inversion regime.

KW - Organic Thin-Film Transistors

KW - compact model

KW - surface potential

KW - traps

UR - http://www.scopus.com/inward/record.url?scp=84881111855&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84881111855&partnerID=8YFLogxK

U2 - 10.1109/ICMTS.2013.6528164

DO - 10.1109/ICMTS.2013.6528164

M3 - Conference contribution

AN - SCOPUS:84881111855

SN - 9781467348485

T3 - IEEE International Conference on Microelectronic Test Structures

SP - 157

EP - 161

BT - 2013 IEEE International Conference on Microelectronic Test Structures, ICMTS 2013 - Conference Proceedings

T2 - 2013 International Conference on Microelectronic Test Structures, ICMTS 2013

Y2 - 25 March 2013 through 28 March 2013

ER -