Benchmarking of a surface potential based organic thin-film transistor model against C10-DNTT high performance test devices

T. K. Maiti, T. Hayashi, Hiroki Mori, M. J. Kang, K. Takimiya, M. Miura-Mattausch, H. J. Mattausch

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

In this paper, a surface potential based compact model for organic thin-film transistors (OTFTs) including both tail and deep trap states across the band gap is presented and benchmarked against measured data from high-performance dinaphtho thieno thiophene (C10-DNTT) based test devices. This model can accurately describe the OTFT test-structure current from week to strong inversion regime.

Original languageEnglish
Title of host publicationIEEE International Conference on Microelectronic Test Structures
Pages157-161
Number of pages5
DOIs
Publication statusPublished - 2013
Externally publishedYes
Event2013 International Conference on Microelectronic Test Structures, ICMTS 2013 - Osaka, Japan
Duration: Mar 25 2013Mar 28 2013

Other

Other2013 International Conference on Microelectronic Test Structures, ICMTS 2013
CountryJapan
CityOsaka
Period3/25/133/28/13

Fingerprint

Surface potential
Benchmarking
Thin film transistors
Thiophene
Energy gap

Keywords

  • compact model
  • Organic Thin-Film Transistors
  • surface potential
  • traps

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Maiti, T. K., Hayashi, T., Mori, H., Kang, M. J., Takimiya, K., Miura-Mattausch, M., & Mattausch, H. J. (2013). Benchmarking of a surface potential based organic thin-film transistor model against C10-DNTT high performance test devices. In IEEE International Conference on Microelectronic Test Structures (pp. 157-161). [6528164] https://doi.org/10.1109/ICMTS.2013.6528164

Benchmarking of a surface potential based organic thin-film transistor model against C10-DNTT high performance test devices. / Maiti, T. K.; Hayashi, T.; Mori, Hiroki; Kang, M. J.; Takimiya, K.; Miura-Mattausch, M.; Mattausch, H. J.

IEEE International Conference on Microelectronic Test Structures. 2013. p. 157-161 6528164.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Maiti, TK, Hayashi, T, Mori, H, Kang, MJ, Takimiya, K, Miura-Mattausch, M & Mattausch, HJ 2013, Benchmarking of a surface potential based organic thin-film transistor model against C10-DNTT high performance test devices. in IEEE International Conference on Microelectronic Test Structures., 6528164, pp. 157-161, 2013 International Conference on Microelectronic Test Structures, ICMTS 2013, Osaka, Japan, 3/25/13. https://doi.org/10.1109/ICMTS.2013.6528164
Maiti TK, Hayashi T, Mori H, Kang MJ, Takimiya K, Miura-Mattausch M et al. Benchmarking of a surface potential based organic thin-film transistor model against C10-DNTT high performance test devices. In IEEE International Conference on Microelectronic Test Structures. 2013. p. 157-161. 6528164 https://doi.org/10.1109/ICMTS.2013.6528164
Maiti, T. K. ; Hayashi, T. ; Mori, Hiroki ; Kang, M. J. ; Takimiya, K. ; Miura-Mattausch, M. ; Mattausch, H. J. / Benchmarking of a surface potential based organic thin-film transistor model against C10-DNTT high performance test devices. IEEE International Conference on Microelectronic Test Structures. 2013. pp. 157-161
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