Band dispersion near the Fermi level for VO2 thin films grown on TiO2 (001) substrates

K. Saeki, T. Wakita, Y. Muraoka, M. Hirai, T. Yokoya, R. Eguchi, S. Shin

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

We have performed angle-resolved photoemission spectroscopy (ARPES) measurements of VO2 using epitaxial thin films and observed the band dispersion near the Fermi level (EF) for this compound. The VO2 thin films have been grown on TiO2 (001) single-crystal substrates using pulsed laser deposition. The films exhibit a first-order metal-insulator transition (MIT) at 305 K. In the ARPES spectra of the metallic phase for the films, the O2p band shows highly dispersive features in the binding-energy range of 3-8 eV along the Γ-Z direction. Also, the V3d state shows two dispersive bands around the Γ point near EF, indicative of two electron pockets centered at the Γ point. Both electron pockets have an occupied bandwidth of about 0.4 eV. Assuming the parabolic energy bands around the Γ point, the effective-mass ratios of the two electron pockets are estimated to be about 0.2 and 1. The present work indicates that the ARPES measurements using epitaxial thin films are promising for determining the band structure of VO2 and thus would play a crucial role to elucidate the mechanism of the MIT in VO2.

Original languageEnglish
Article number125406
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume80
Issue number12
DOIs
Publication statusPublished - Sep 10 2009

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Band dispersion near the Fermi level for VO2 thin films grown on TiO2 (001) substrates'. Together they form a unique fingerprint.

  • Cite this