Auger-electron-spectroscopy (AES) measurements on anodically oxidized layers of single-crystal GaP

Akira Okada, Yasuhide Ohnuki, Taroh Inada

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Abstract

Anodically oxidized layers were grown on GaP (111) surfaces from a solution of N-methyl acetamide, H2O, NH4OH, and citric acid having a pH value of 9.0. The layer growth rate was 11 Å/V with a constant current density of 0.5 mA/cm2. Auger electron spectra and depth profiles of the components were measured. The phosphorous L3M 2,3M2,3 transition at 117 eV suffered a chemical shift in the oxide layers, and the shape of the first derivative of the Auger signal was completely different from that observed with P in GaP. Observation of the phosphorous K L2,3L2,3 transition at 1858 eV indicated that the ratio of P/Ga had a constant value throughout the oxide layers. Only the oxygen concentrations varied along with the depth.

Original languageEnglish
Pages (from-to)447-449
Number of pages3
JournalApplied Physics Letters
Volume33
Issue number5
DOIs
Publication statusPublished - 1978
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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