TY - JOUR
T1 - Atomic modeling of the plasma EUV sources
AU - Sasaki, Akira
AU - Sunahara, Atsushi
AU - Furukawa, Hiroyuki
AU - Nishihara, Katsunobu
AU - Nishikawa, Takeshi
AU - Koike, Fumihiro
AU - Tanuma, Hajime
N1 - Funding Information:
This work was supported by Grant-in-Aid for Scientific Research (B) 20340166 from Japan Society for the Promotion of Science (JSPS), and Leading Project promoted by MEXT Japanese Ministry.
Copyright:
Copyright 2009 Elsevier B.V., All rights reserved.
PY - 2009/9
Y1 - 2009/9
N2 - We present the development of population kinetics models for tin plasmas that can be employed to design an EUV source for microlithography. The atomic kinetic code is constrained for the requirement that the model must be able to calculate spectral emissivity and opacity that can be used in radiation hydrodynamic simulations. Methods to develop compact and reliable atomic model with an appropriate set of atomic states are discussed. Specifically, after investigation of model dependencies and comparison experiment, we improve the effect of configuration interaction and the treatment of satellite lines. Using the present atomic model we discuss the temperature and density dependencies of the emissivity, as well as conditions necessary to obtain high efficiency EUV power at λ = 13.5 nm.
AB - We present the development of population kinetics models for tin plasmas that can be employed to design an EUV source for microlithography. The atomic kinetic code is constrained for the requirement that the model must be able to calculate spectral emissivity and opacity that can be used in radiation hydrodynamic simulations. Methods to develop compact and reliable atomic model with an appropriate set of atomic states are discussed. Specifically, after investigation of model dependencies and comparison experiment, we improve the effect of configuration interaction and the treatment of satellite lines. Using the present atomic model we discuss the temperature and density dependencies of the emissivity, as well as conditions necessary to obtain high efficiency EUV power at λ = 13.5 nm.
KW - Collisional-radiative model
KW - EUV lithography
KW - Laser produced plasma
KW - Opacity
KW - Plasma spectroscopy
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U2 - 10.1016/j.hedp.2009.04.002
DO - 10.1016/j.hedp.2009.04.002
M3 - Article
AN - SCOPUS:67650321544
VL - 5
SP - 147
EP - 151
JO - High Energy Density Physics
JF - High Energy Density Physics
SN - 1574-1818
IS - 3
ER -