Atom-resolved imaging of the potential distribution at Si (111) 7 × 7 surfaces

Tadashi Shiota, Keiji Nakayama

Research output: Contribution to journalArticlepeer-review

23 Citations (Scopus)

Abstract

Si(111) 7 × 7 surfaces were observed at an atomic scale by noncontact atomic force microscopy (ncAFM) and scanning Kelvin probe microscopy (SKPM). A vacancy at the Si surface was resolved by both ncAFM and SKPM. This indicates that SKPM, as well as ncAFM, has a true atomic-scale lateral resolution. In the atom-resolved SKPM observations, two types of image contrast were acquired even when the observation conditions were the same except for the surface condition of a cantilever tip. The result experimentally revealed that the contrast of an atom-resolved SKPM image strongly depended on the surface condition of the probe tip.

Original languageEnglish
Pages (from-to)L1178-L1180
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume41
Issue number10 B
Publication statusPublished - Oct 15 2002
Externally publishedYes

Keywords

  • AFM
  • Atom-resolved image
  • Contrast inversion
  • Noncontact
  • SKPM
  • Si(111)

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Atom-resolved imaging of the potential distribution at Si (111) 7 × 7 surfaces'. Together they form a unique fingerprint.

Cite this