Anomalous fast annihilation of thermal donors in carbon-rich silicon

Y. Kamiura, T. Maeda, Y. Yamashita, F. Hashimoto

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

We have studied the effects of carbon on the annihilation kinetics of the first six species of thermal donor (TD) family (TD-1 through TD-6) in Czochralski Si by means of low-temperature infrared absorption spectroscopy. After the formation of TDs in the temperature range of 450-480°C, prolonged annealing at the same temperature caused those TDs to disappear simultaneously. In C-rich crystals, TDs were annihilated by an order faster than in C-lean ones. The annihilation kinetics was first order, and the activation energy was about 2eV regardless of the species of TD. Possible mechanisms of this carbon-enhanced annihilation are discussed.

Original languageEnglish
Pages (from-to)1321-1326
Number of pages6
JournalMaterials Science Forum
Volume196-201
Issue numberpt 3
DOIs
Publication statusPublished - Jan 1 1995
EventProceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4) - Sendai, Jpn
Duration: Jul 23 1995Jul 28 1995

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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