Anomalous depth profile of implanted fluorine ions in SiO2/Si

K. Hanamoto; H. Yoshimoto; T. Hosono; A. Hirai; Y. Kido; Y. Nakayama; R. Kaigawa

doi:10.1016/S0168-583X(98)00107-4

Anomalous depth profile of implanted fluorine ions in SiO₂/Si

K. Hanamoto, H. Yoshimoto, T. Hosono, A. Hirai, Y. Kido, Y. Nakayama, R. Kaigawa

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Fluorine ions have been implanted into SiO₂/Si with an energy of 30 keV at doses of 0.5 and 1 × 10¹⁷ ions/cm². Depth profiles of fluorine have been studied by X-ray photoelectron spectroscopy (XPS) for both as-implanted and annealed samples. It was found that depth profiles of fluorine in SiO₂/Si did not agree with the predicted Gaussian profiles and showed an enhancement of fluorine concentration in SiO₂ region for as-implanted samples. It is thought that anomalous depth profiles may be due to rather high diffusion coefficient in Si than that in SiO₂ as a result of fluorine implantation. After annealing at 700°C for 30 min, fluorine concentrations considerably decreased in Si region compared with in SiO₂ region. It could be considered that the oxide layers prevent the fluorine diffusion and the fluorine is trapped at around the SiO₂/Si interface.

Original language	English
Pages (from-to)	124-128
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	140
Issue number	1-2
DOIs	https://doi.org/10.1016/S0168-583X(98)00107-4
Publication status	Published - Apr 1998
Externally published	Yes

Keywords

Depth profile
Fluorine ion implantation
SiO/Si
X-ray photoelectron spectroscopy

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

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Anomalous depth profile of implanted fluorine ions in SiO₂/Si. / Hanamoto, K.; Yoshimoto, H.; Hosono, T.; Hirai, A.; Kido, Y.; Nakayama, Y.; Kaigawa, R.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 140, No. 1-2, 04.1998, p. 124-128.

Research output: Contribution to journal › Article › peer-review

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title = "Anomalous depth profile of implanted fluorine ions in SiO2/Si",

abstract = "Fluorine ions have been implanted into SiO2/Si with an energy of 30 keV at doses of 0.5 and 1 × 1017 ions/cm2. Depth profiles of fluorine have been studied by X-ray photoelectron spectroscopy (XPS) for both as-implanted and annealed samples. It was found that depth profiles of fluorine in SiO2/Si did not agree with the predicted Gaussian profiles and showed an enhancement of fluorine concentration in SiO2 region for as-implanted samples. It is thought that anomalous depth profiles may be due to rather high diffusion coefficient in Si than that in SiO2 as a result of fluorine implantation. After annealing at 700°C for 30 min, fluorine concentrations considerably decreased in Si region compared with in SiO2 region. It could be considered that the oxide layers prevent the fluorine diffusion and the fluorine is trapped at around the SiO2/Si interface.",

keywords = "Depth profile, Fluorine ion implantation, SiO/Si, X-ray photoelectron spectroscopy",

author = "K. Hanamoto and H. Yoshimoto and T. Hosono and A. Hirai and Y. Kido and Y. Nakayama and R. Kaigawa",

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AU - Hanamoto, K.

AU - Yoshimoto, H.

AU - Hosono, T.

AU - Hirai, A.

AU - Kido, Y.

AU - Nakayama, Y.

AU - Kaigawa, R.

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N2 - Fluorine ions have been implanted into SiO2/Si with an energy of 30 keV at doses of 0.5 and 1 × 1017 ions/cm2. Depth profiles of fluorine have been studied by X-ray photoelectron spectroscopy (XPS) for both as-implanted and annealed samples. It was found that depth profiles of fluorine in SiO2/Si did not agree with the predicted Gaussian profiles and showed an enhancement of fluorine concentration in SiO2 region for as-implanted samples. It is thought that anomalous depth profiles may be due to rather high diffusion coefficient in Si than that in SiO2 as a result of fluorine implantation. After annealing at 700°C for 30 min, fluorine concentrations considerably decreased in Si region compared with in SiO2 region. It could be considered that the oxide layers prevent the fluorine diffusion and the fluorine is trapped at around the SiO2/Si interface.

AB - Fluorine ions have been implanted into SiO2/Si with an energy of 30 keV at doses of 0.5 and 1 × 1017 ions/cm2. Depth profiles of fluorine have been studied by X-ray photoelectron spectroscopy (XPS) for both as-implanted and annealed samples. It was found that depth profiles of fluorine in SiO2/Si did not agree with the predicted Gaussian profiles and showed an enhancement of fluorine concentration in SiO2 region for as-implanted samples. It is thought that anomalous depth profiles may be due to rather high diffusion coefficient in Si than that in SiO2 as a result of fluorine implantation. After annealing at 700°C for 30 min, fluorine concentrations considerably decreased in Si region compared with in SiO2 region. It could be considered that the oxide layers prevent the fluorine diffusion and the fluorine is trapped at around the SiO2/Si interface.

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