TY - JOUR
T1 - Anomalous depth profile of implanted fluorine ions in SiO2/Si
AU - Hanamoto, K.
AU - Yoshimoto, H.
AU - Hosono, T.
AU - Hirai, A.
AU - Kido, Y.
AU - Nakayama, Y.
AU - Kaigawa, R.
N1 - Funding Information:
This work is supported by The Science Research Promotion Fund from Japan Private School Promotion Foundation.
PY - 1998/4
Y1 - 1998/4
N2 - Fluorine ions have been implanted into SiO2/Si with an energy of 30 keV at doses of 0.5 and 1 × 1017 ions/cm2. Depth profiles of fluorine have been studied by X-ray photoelectron spectroscopy (XPS) for both as-implanted and annealed samples. It was found that depth profiles of fluorine in SiO2/Si did not agree with the predicted Gaussian profiles and showed an enhancement of fluorine concentration in SiO2 region for as-implanted samples. It is thought that anomalous depth profiles may be due to rather high diffusion coefficient in Si than that in SiO2 as a result of fluorine implantation. After annealing at 700°C for 30 min, fluorine concentrations considerably decreased in Si region compared with in SiO2 region. It could be considered that the oxide layers prevent the fluorine diffusion and the fluorine is trapped at around the SiO2/Si interface.
AB - Fluorine ions have been implanted into SiO2/Si with an energy of 30 keV at doses of 0.5 and 1 × 1017 ions/cm2. Depth profiles of fluorine have been studied by X-ray photoelectron spectroscopy (XPS) for both as-implanted and annealed samples. It was found that depth profiles of fluorine in SiO2/Si did not agree with the predicted Gaussian profiles and showed an enhancement of fluorine concentration in SiO2 region for as-implanted samples. It is thought that anomalous depth profiles may be due to rather high diffusion coefficient in Si than that in SiO2 as a result of fluorine implantation. After annealing at 700°C for 30 min, fluorine concentrations considerably decreased in Si region compared with in SiO2 region. It could be considered that the oxide layers prevent the fluorine diffusion and the fluorine is trapped at around the SiO2/Si interface.
KW - Depth profile
KW - Fluorine ion implantation
KW - SiO/Si
KW - X-ray photoelectron spectroscopy
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U2 - 10.1016/S0168-583X(98)00107-4
DO - 10.1016/S0168-583X(98)00107-4
M3 - Article
AN - SCOPUS:0032050172
VL - 140
SP - 124
EP - 128
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
SN - 0168-583X
IS - 1-2
ER -