Anisotropic magnetoresistance of CeNiSn

Y. Inada, T. Ishida, H. Azuma, D. Aoki, R. Settai, Y. Onuki, K. Kobayashi, T. Takabatake, G. Nakamoto, H. Fujii, K. Maezawa

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We have measured the magnetoresistance at high fields up to 15 T and at low temperatures down to 0.4 K for CeNiSn with the orthorhombic structure. The longitudinal magnetoresistance (J∥H) is small in magnitude for the magnetic field H∥b- and c-axis. On the other hand, the positive magnetoresistance is found to become dominant with the decrease of temperature for H∥b- and c-axis in the transverse configuration (J⊥H). For H∥a, the magnetoresistance is negative for any current direction. These experimental results have been discussed on the basis of the cyclotron motion of the compensated carriers with closed Fermi surfaces and the reduction of the anisotropic hybridization gap.

Original languageEnglish
Pages (from-to)690-694
Number of pages5
JournalPhysica B: Condensed Matter
Volume230-232
DOIs
Publication statusPublished - Feb 1997
Externally publishedYes

Keywords

  • CeNiSn
  • Hybridization gap
  • Magnetoresistance

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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  • Cite this

    Inada, Y., Ishida, T., Azuma, H., Aoki, D., Settai, R., Onuki, Y., Kobayashi, K., Takabatake, T., Nakamoto, G., Fujii, H., & Maezawa, K. (1997). Anisotropic magnetoresistance of CeNiSn. Physica B: Condensed Matter, 230-232, 690-694. https://doi.org/10.1016/S0921-4526(96)00804-6