Angle-resolved photoemission study of Si electronic structure

Boron concentration dependence

Takanori Wakita, Hiroyuki Okazaki, Yoshihiko Takano, Masaaki Hirai, Yuji Muraoka, Takayoshi Yokoya

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The boron concentration dependence of the Si electronic structure of Si(1 0 0)2 × 1 surfaces were investigated by angle-resolved photoemission spectroscopy (ARPES). The ARPES spectra exhibit rigid shifts toward lower binding energy as the boron concentration increases. The band dispersion was obtained from fitting procedure, and it is found that the top of the valence band does not exceed the Fermi level even with a boron concentration 35 times larger than the critical concentration of the metal-insulator transition.

Original languageEnglish
JournalPhysica C: Superconductivity and its Applications
Volume470
Issue numberSUPPL.1
DOIs
Publication statusPublished - Dec 2010

Fingerprint

Boron
Photoemission
Electronic structure
boron
photoelectric emission
Photoelectron spectroscopy
electronic structure
Metal insulator transition
Valence bands
Fermi level
Binding energy
spectroscopy
binding energy
insulators
valence
shift
metals

Keywords

  • Elemental semiconductor
  • Metal-insulator transitions
  • Photoemission spectroscopy
  • Silicon superconductor

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Energy Engineering and Power Technology
  • Electronic, Optical and Magnetic Materials

Cite this

Angle-resolved photoemission study of Si electronic structure : Boron concentration dependence. / Wakita, Takanori; Okazaki, Hiroyuki; Takano, Yoshihiko; Hirai, Masaaki; Muraoka, Yuji; Yokoya, Takayoshi.

In: Physica C: Superconductivity and its Applications, Vol. 470, No. SUPPL.1, 12.2010.

Research output: Contribution to journalArticle

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AU - Muraoka, Yuji

AU - Yokoya, Takayoshi

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