Angle-resolved photoemission spectroscopy for VO2 thin films grown on TiO2 (0 0 1) substrates

Yuji Muraoka, K. Saeki, Y. Yao, Takanori Wakita, M. Hirai, Takayoshi Yokoya, Ritsuko Eguchi, S. Shin

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We present the results of angle-resolved photoemission spectroscopy (ARPES) measurements of metallic VO2 thin films. The VO2 thin films have been grown on TiO2 (0 0 1) single crystal substrates using pulsed laser deposition. The films exhibit a first-order metal-insulator transition (MIT) at 305 K. In the ARPES spectra of the metallic phase for the films, the O 2p band shows highly dispersive feature in the binding energy range of 3-8 eV along the Γ-Z direction. The periodicity of the dispersive band is found to be 2.2Å-1 which is almost identical with the periodicity expected from the c-axis length of the VO2 thin films. The overall feature of the experimental band structure is similar to the band structure calculations, supporting that we have succeeded in observing the dispersive band of the O 2p state in the metallic VO2 thin film. The present work indicates that the ARPES measurements using epitaxial thin films are promising for determining the band structure of VO2.

Original languageEnglish
Pages (from-to)249-251
Number of pages3
JournalJournal of Electron Spectroscopy and Related Phenomena
Volume181
Issue number2-3
DOIs
Publication statusPublished - Aug 2010

Fingerprint

Photoelectron spectroscopy
photoelectric emission
Thin films
Band structure
Substrates
thin films
Metallic films
spectroscopy
periodic variations
Metal insulator transition
Epitaxial films
Pulsed laser deposition
Binding energy
pulsed laser deposition
Single crystals
binding energy
insulators
single crystals
metals

Keywords

  • ARPES
  • Thin film
  • VO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Physical and Theoretical Chemistry
  • Spectroscopy
  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics
  • Radiation

Cite this

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title = "Angle-resolved photoemission spectroscopy for VO2 thin films grown on TiO2 (0 0 1) substrates",
abstract = "We present the results of angle-resolved photoemission spectroscopy (ARPES) measurements of metallic VO2 thin films. The VO2 thin films have been grown on TiO2 (0 0 1) single crystal substrates using pulsed laser deposition. The films exhibit a first-order metal-insulator transition (MIT) at 305 K. In the ARPES spectra of the metallic phase for the films, the O 2p band shows highly dispersive feature in the binding energy range of 3-8 eV along the Γ-Z direction. The periodicity of the dispersive band is found to be 2.2{\AA}-1 which is almost identical with the periodicity expected from the c-axis length of the VO2 thin films. The overall feature of the experimental band structure is similar to the band structure calculations, supporting that we have succeeded in observing the dispersive band of the O 2p state in the metallic VO2 thin film. The present work indicates that the ARPES measurements using epitaxial thin films are promising for determining the band structure of VO2.",
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author = "Yuji Muraoka and K. Saeki and Y. Yao and Takanori Wakita and M. Hirai and Takayoshi Yokoya and Ritsuko Eguchi and S. Shin",
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T1 - Angle-resolved photoemission spectroscopy for VO2 thin films grown on TiO2 (0 0 1) substrates

AU - Muraoka, Yuji

AU - Saeki, K.

AU - Yao, Y.

AU - Wakita, Takanori

AU - Hirai, M.

AU - Yokoya, Takayoshi

AU - Eguchi, Ritsuko

AU - Shin, S.

PY - 2010/8

Y1 - 2010/8

N2 - We present the results of angle-resolved photoemission spectroscopy (ARPES) measurements of metallic VO2 thin films. The VO2 thin films have been grown on TiO2 (0 0 1) single crystal substrates using pulsed laser deposition. The films exhibit a first-order metal-insulator transition (MIT) at 305 K. In the ARPES spectra of the metallic phase for the films, the O 2p band shows highly dispersive feature in the binding energy range of 3-8 eV along the Γ-Z direction. The periodicity of the dispersive band is found to be 2.2Å-1 which is almost identical with the periodicity expected from the c-axis length of the VO2 thin films. The overall feature of the experimental band structure is similar to the band structure calculations, supporting that we have succeeded in observing the dispersive band of the O 2p state in the metallic VO2 thin film. The present work indicates that the ARPES measurements using epitaxial thin films are promising for determining the band structure of VO2.

AB - We present the results of angle-resolved photoemission spectroscopy (ARPES) measurements of metallic VO2 thin films. The VO2 thin films have been grown on TiO2 (0 0 1) single crystal substrates using pulsed laser deposition. The films exhibit a first-order metal-insulator transition (MIT) at 305 K. In the ARPES spectra of the metallic phase for the films, the O 2p band shows highly dispersive feature in the binding energy range of 3-8 eV along the Γ-Z direction. The periodicity of the dispersive band is found to be 2.2Å-1 which is almost identical with the periodicity expected from the c-axis length of the VO2 thin films. The overall feature of the experimental band structure is similar to the band structure calculations, supporting that we have succeeded in observing the dispersive band of the O 2p state in the metallic VO2 thin film. The present work indicates that the ARPES measurements using epitaxial thin films are promising for determining the band structure of VO2.

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