Analytical investigation on design instruction to avoid oscillatory false triggering of fast switching SiC-MOSFETs

Yusuke Sugihara, Kimihiro Nanamori, Seiya Ishiwaki, Yuma Hayashi, Kyota Aikawa, Kazuhiro Umetani, Eiji Hiraki, Masayoshi Yamamoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Citations (Scopus)

Abstract

SiC-MOSFETs have attracting increasing attention because of their outstanding characteristics that contributes to high efficiency and high power density of power converters. However, compared to conventional Si-IGBTs, SiC-MOSFETs are susceptible to false triggering, because they tend to generate large switching noise due to ultrafast switching capability and have a lower threshold voltage in high temperature operation. Particularly, disastrous oscillation of repetitive false triggering can occur after a fast turn-off, which is the severe issue for practical application of SiC-MOSFETs. The purpose of this paper is to give an instruction to avoid this phenomenon. This paper hypothesized that the repetitive false triggering is the parasitic oscillation caused by parasitic capacitance of SiC-MOSFET, and parasitic inductance of wiring. Based on this hypothesis, this paper analyzed the oscillatory condition of the parasitic oscillator to propose a design instruction to avoid the oscillatory false triggering. The result revealed that the parasitic inductance of the gate, drain, and source wiring should be designed so that the resonance frequency of the parasitic LC resonator in the gating circuit is far apart from that of the power circuit. This paper also presents experimental results that support appropriateness of the proposed design instruction.

Original languageEnglish
Title of host publication2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages5113-5118
Number of pages6
ISBN (Electronic)9781509029983
DOIs
Publication statusPublished - Nov 3 2017
Event9th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2017 - Cincinnati, United States
Duration: Oct 1 2017Oct 5 2017

Publication series

Name2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017
Volume2017-January

Other

Other9th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2017
CountryUnited States
CityCincinnati
Period10/1/1710/5/17

Keywords

  • Fast switching
  • Oscillatory false triggering
  • Parasitic inductance
  • Selfsustained oscillation
  • SiC-MOSFET

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering
  • Renewable Energy, Sustainability and the Environment
  • Control and Optimization

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