Analysis of the emission spectrum of Xe and Sn

A. Sasaki, K. Nishihara, A. Sunahara, Takeshi Nishikawa, F. Koike, K. Kagawa, H. Tanuma

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

The atomic processes in the Xe and Sn plasmas are investigated. The wavelength of atomic transitions is shown to have a critical effect in reproducing experiments. The wavelengths of resonance lines in our model are improved through detailed comparison with charge specific spectroscopic measurement. Distribution of satellite lines in the presence of the effect of the configuration interaction (CI) is investigated. The spectral profile of Xe and Sn emission, which determines fraction of usable EUV power, is discussed with respect to its dependence on the plasma temperature, density as well as the optical depth.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Volume6151 II
DOIs
Publication statusPublished - 2006
EventEmerging Lithographic Technologies X - San Jose, CA, United States
Duration: Jan 21 2006Jan 23 2006

Other

OtherEmerging Lithographic Technologies X
CountryUnited States
CitySan Jose, CA
Period1/21/061/23/06

Fingerprint

emission spectra
Plasmas
Wavelength
plasma temperature
resonance lines
wavelengths
optical thickness
configuration interaction
Satellites
profiles
Experiments
Temperature

Keywords

  • Atomic process
  • Emissivity
  • EUV lithography
  • Opacity
  • Plasma spectroscopy
  • Simulation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Sasaki, A., Nishihara, K., Sunahara, A., Nishikawa, T., Koike, F., Kagawa, K., & Tanuma, H. (2006). Analysis of the emission spectrum of Xe and Sn. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 6151 II). [61513W] https://doi.org/10.1117/12.655938

Analysis of the emission spectrum of Xe and Sn. / Sasaki, A.; Nishihara, K.; Sunahara, A.; Nishikawa, Takeshi; Koike, F.; Kagawa, K.; Tanuma, H.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 6151 II 2006. 61513W.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sasaki, A, Nishihara, K, Sunahara, A, Nishikawa, T, Koike, F, Kagawa, K & Tanuma, H 2006, Analysis of the emission spectrum of Xe and Sn. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 6151 II, 61513W, Emerging Lithographic Technologies X, San Jose, CA, United States, 1/21/06. https://doi.org/10.1117/12.655938
Sasaki A, Nishihara K, Sunahara A, Nishikawa T, Koike F, Kagawa K et al. Analysis of the emission spectrum of Xe and Sn. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 6151 II. 2006. 61513W https://doi.org/10.1117/12.655938
Sasaki, A. ; Nishihara, K. ; Sunahara, A. ; Nishikawa, Takeshi ; Koike, F. ; Kagawa, K. ; Tanuma, H. / Analysis of the emission spectrum of Xe and Sn. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 6151 II 2006.
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