Analysis of the emission spectrum of Xe and Sn

A. Sasaki, K. Nishihara, A. Sunahara, T. Nishikawa, F. Koike, K. Kagawa, H. Tanuma

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)


The atomic processes in the Xe and Sn plasmas are investigated. The wavelength of atomic transitions is shown to have a critical effect in reproducing experiments. The wavelengths of resonance lines in our model are improved through detailed comparison with charge specific spectroscopic measurement. Distribution of satellite lines in the presence of the effect of the configuration interaction (CI) is investigated. The spectral profile of Xe and Sn emission, which determines fraction of usable EUV power, is discussed with respect to its dependence on the plasma temperature, density as well as the optical depth.

Original languageEnglish
Title of host publicationEmerging Lithographic Technologies X
Publication statusPublished - Jul 10 2006
EventEmerging Lithographic Technologies X - San Jose, CA, United States
Duration: Jan 21 2006Jan 23 2006

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6151 II
ISSN (Print)0277-786X


OtherEmerging Lithographic Technologies X
Country/TerritoryUnited States
CitySan Jose, CA


  • Atomic process
  • EUV lithography
  • Emissivity
  • Opacity
  • Plasma spectroscopy
  • Simulation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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