Analysis of the emission spectrum of Xe and Sn

A. Sasaki; K. Nishihara; A. Sunahara; T. Nishikawa; F. Koike; K. Kagawa; H. Tanuma

doi:10.1117/12.655938

Analysis of the emission spectrum of Xe and Sn

A. Sasaki, K. Nishihara, A. Sunahara, T. Nishikawa, F. Koike, K. Kagawa, H. Tanuma

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

9 Citations (Scopus)

Abstract

The atomic processes in the Xe and Sn plasmas are investigated. The wavelength of atomic transitions is shown to have a critical effect in reproducing experiments. The wavelengths of resonance lines in our model are improved through detailed comparison with charge specific spectroscopic measurement. Distribution of satellite lines in the presence of the effect of the configuration interaction (CI) is investigated. The spectral profile of Xe and Sn emission, which determines fraction of usable EUV power, is discussed with respect to its dependence on the plasma temperature, density as well as the optical depth.

Original language	English
Title of host publication	Emerging Lithographic Technologies X
DOIs	https://doi.org/10.1117/12.655938
Publication status	Published - Jul 10 2006
Event	Emerging Lithographic Technologies X - San Jose, CA, United States Duration: Jan 21 2006 → Jan 23 2006

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	6151 II
ISSN (Print)	0277-786X

Other

Other	Emerging Lithographic Technologies X
Country	United States
City	San Jose, CA
Period	1/21/06 → 1/23/06

Keywords

Atomic process
EUV lithography
Emissivity
Opacity
Plasma spectroscopy
Simulation

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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Sasaki, A, Nishihara, K, Sunahara, A, Nishikawa, T, Koike, F, Kagawa, K & Tanuma, H 2006, Analysis of the emission spectrum of Xe and Sn. in Emerging Lithographic Technologies X., 61513W, Proceedings of SPIE - The International Society for Optical Engineering, vol. 6151 II, Emerging Lithographic Technologies X, San Jose, CA, United States, 1/21/06. https://doi.org/10.1117/12.655938

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title = "Analysis of the emission spectrum of Xe and Sn",

abstract = "The atomic processes in the Xe and Sn plasmas are investigated. The wavelength of atomic transitions is shown to have a critical effect in reproducing experiments. The wavelengths of resonance lines in our model are improved through detailed comparison with charge specific spectroscopic measurement. Distribution of satellite lines in the presence of the effect of the configuration interaction (CI) is investigated. The spectral profile of Xe and Sn emission, which determines fraction of usable EUV power, is discussed with respect to its dependence on the plasma temperature, density as well as the optical depth.",

keywords = "Atomic process, EUV lithography, Emissivity, Opacity, Plasma spectroscopy, Simulation",

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doi = "10.1117/12.655938",

language = "English",

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T1 - Analysis of the emission spectrum of Xe and Sn

AU - Sasaki, A.

AU - Nishihara, K.

AU - Sunahara, A.

AU - Nishikawa, T.

AU - Koike, F.

AU - Kagawa, K.

AU - Tanuma, H.

PY - 2006/7/10

Y1 - 2006/7/10

N2 - The atomic processes in the Xe and Sn plasmas are investigated. The wavelength of atomic transitions is shown to have a critical effect in reproducing experiments. The wavelengths of resonance lines in our model are improved through detailed comparison with charge specific spectroscopic measurement. Distribution of satellite lines in the presence of the effect of the configuration interaction (CI) is investigated. The spectral profile of Xe and Sn emission, which determines fraction of usable EUV power, is discussed with respect to its dependence on the plasma temperature, density as well as the optical depth.

AB - The atomic processes in the Xe and Sn plasmas are investigated. The wavelength of atomic transitions is shown to have a critical effect in reproducing experiments. The wavelengths of resonance lines in our model are improved through detailed comparison with charge specific spectroscopic measurement. Distribution of satellite lines in the presence of the effect of the configuration interaction (CI) is investigated. The spectral profile of Xe and Sn emission, which determines fraction of usable EUV power, is discussed with respect to its dependence on the plasma temperature, density as well as the optical depth.

KW - Atomic process

KW - EUV lithography

KW - Emissivity

KW - Opacity

KW - Plasma spectroscopy

KW - Simulation

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DO - 10.1117/12.655938

M3 - Conference contribution

AN - SCOPUS:33745587003

SN - 0819461946

SN - 9780819461940

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Emerging Lithographic Technologies X

T2 - Emerging Lithographic Technologies X

Y2 - 21 January 2006 through 23 January 2006

ER -

Analysis of the emission spectrum of Xe and Sn

Abstract

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Keywords

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