Abstract
The atomic processes in the Xe and Sn plasmas are investigated. The wavelength of atomic transitions is shown to have a critical effect in reproducing experiments. The wavelengths of resonance lines in our model are improved through detailed comparison with charge specific spectroscopic measurement. Distribution of satellite lines in the presence of the effect of the configuration interaction (CI) is investigated. The spectral profile of Xe and Sn emission, which determines fraction of usable EUV power, is discussed with respect to its dependence on the plasma temperature, density as well as the optical depth.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 6151 II |
| DOIs | |
| Publication status | Published - 2006 |
| Event | Emerging Lithographic Technologies X - San Jose, CA, United States Duration: Jan 21 2006 → Jan 23 2006 |
Other
| Other | Emerging Lithographic Technologies X |
|---|---|
| Country | United States |
| City | San Jose, CA |
| Period | 1/21/06 → 1/23/06 |
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Keywords
- Atomic process
- Emissivity
- EUV lithography
- Opacity
- Plasma spectroscopy
- Simulation
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics
Cite this
Analysis of the emission spectrum of Xe and Sn. / Sasaki, A.; Nishihara, K.; Sunahara, A.; Nishikawa, Takeshi; Koike, F.; Kagawa, K.; Tanuma, H.
Proceedings of SPIE - The International Society for Optical Engineering. Vol. 6151 II 2006. 61513W.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Analysis of the emission spectrum of Xe and Sn
AU - Sasaki, A.
AU - Nishihara, K.
AU - Sunahara, A.
AU - Nishikawa, Takeshi
AU - Koike, F.
AU - Kagawa, K.
AU - Tanuma, H.
PY - 2006
Y1 - 2006
N2 - The atomic processes in the Xe and Sn plasmas are investigated. The wavelength of atomic transitions is shown to have a critical effect in reproducing experiments. The wavelengths of resonance lines in our model are improved through detailed comparison with charge specific spectroscopic measurement. Distribution of satellite lines in the presence of the effect of the configuration interaction (CI) is investigated. The spectral profile of Xe and Sn emission, which determines fraction of usable EUV power, is discussed with respect to its dependence on the plasma temperature, density as well as the optical depth.
AB - The atomic processes in the Xe and Sn plasmas are investigated. The wavelength of atomic transitions is shown to have a critical effect in reproducing experiments. The wavelengths of resonance lines in our model are improved through detailed comparison with charge specific spectroscopic measurement. Distribution of satellite lines in the presence of the effect of the configuration interaction (CI) is investigated. The spectral profile of Xe and Sn emission, which determines fraction of usable EUV power, is discussed with respect to its dependence on the plasma temperature, density as well as the optical depth.
KW - Atomic process
KW - Emissivity
KW - EUV lithography
KW - Opacity
KW - Plasma spectroscopy
KW - Simulation
UR - http://www.scopus.com/inward/record.url?scp=33745587003&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33745587003&partnerID=8YFLogxK
U2 - 10.1117/12.655938
DO - 10.1117/12.655938
M3 - Conference contribution
AN - SCOPUS:33745587003
SN - 0819461946
SN - 9780819461940
VL - 6151 II
BT - Proceedings of SPIE - The International Society for Optical Engineering
ER -