Analysis of hole transport in cubic phase of p-type GaN by relaxation time approximation

Yasuhiko Hayashi, Tetsuo Soga, Masayoshi Umeno, Takashi Jimbo

Research output: Contribution to journalConference article

Abstract

The theoretical hole transport characteristics of the cubic phase of p-type GaN, that takes the Hall coefficient anisotropy factor of the energy surface for heavy- and light-hole bands into consideration, are investigated over a wide range of temperature using the `relaxation time approximation'. The calculations show that the dominant lattice scattering mechanism for holes is the acoustic deformation potential. We show that Hall factors are very important when we attempt to compare the calculated drift mobility with measured Hall ones.

Original languageEnglish
Pages (from-to)256-259
Number of pages4
JournalPhysica B: Condensed Matter
Volume272
Issue number1-4
DOIs
Publication statusPublished - Dec 1 1999
EventProceedings of the 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11) - Kyoto, Jpn
Duration: Jul 19 1999Jul 23 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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