TY - GEN
T1 - An optically reconfigurable gate array workable under a strong gamma radiation environment
AU - Fujisaki, Shinya
AU - Fujimori, Takumi
AU - Watanabe, Minoru
N1 - Funding Information:
This research was partly supported by the Initiatives for Atomic Energy Basic and Generic Strategic Research No. 283101, the Ministry of Education, Science, Sports and Culture, Grant-in-Aid for JSPS Research Fellow, No. 16J12063 and Grant-in-Aid for Scientific Research(B), No. 15H02676. The VLSI chip in this study was fabricated in the chip fabrication program of VLSI Design and Education Center (VDEC), the University of Tokyo in collaboration with Rohm Co. Ltd. and Toppan Printing Co. Ltd.
Publisher Copyright:
© 2019 IEEE.
PY - 2019/5/14
Y1 - 2019/5/14
N2 - Optically reconfigurable gate arrays (ORGAs) have been under development for use as radiation-hardened devices. The ORGAs are a type of field programmable gate array (FPGA). However, by introducing an optical holographic memory technology onto currently available semiconductor technology, the radiation tolerances of ORGAs could be increased drastically. The total-ionizing-dose tolerance of the ORGA VLSI has reached over 400 Mrad, which is 400 times higher radiation tolerance than current radiation-hardened VLSIs. Moreover, we have developed a radiation-hardened power supply unit based on lithium-ion battery cells. For this experiment, we have demonstrated that an ORGA powered by the radiation-hardened power supply unit can function correctly for 24 hr at a dose rate of 15.3-22 rad/s (Si) using a Co60 gamma radiation source.
AB - Optically reconfigurable gate arrays (ORGAs) have been under development for use as radiation-hardened devices. The ORGAs are a type of field programmable gate array (FPGA). However, by introducing an optical holographic memory technology onto currently available semiconductor technology, the radiation tolerances of ORGAs could be increased drastically. The total-ionizing-dose tolerance of the ORGA VLSI has reached over 400 Mrad, which is 400 times higher radiation tolerance than current radiation-hardened VLSIs. Moreover, we have developed a radiation-hardened power supply unit based on lithium-ion battery cells. For this experiment, we have demonstrated that an ORGA powered by the radiation-hardened power supply unit can function correctly for 24 hr at a dose rate of 15.3-22 rad/s (Si) using a Co60 gamma radiation source.
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U2 - 10.1109/WMED.2019.8714154
DO - 10.1109/WMED.2019.8714154
M3 - Conference contribution
AN - SCOPUS:85066806990
T3 - IEEE Workshop on Microelectronics and Electron Devices, WMED
SP - 32
EP - 36
BT - 2019 IEEE Workshop on Microelectronics and Electron Devices, WMED 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 17th Annual IEEE Workshop on Microelectronics and Electron Devices, WMED 2019
Y2 - 26 April 2019
ER -