An investigation of correlation between transport characteristics and trap states in n -channel organic field-effect transistors

Naoko Kawasaki, Yohei Ohta, Yoshihiro Kubozono, Atsushi Konishi, Akihiko Fujiwara

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14 Citations (Scopus)

Abstract

Transport characteristics in n -channel organic field-effect transistors are discussed on the basis of density of states (DOS) for trap states determined with multiple trap and release model. First the trap-free intrinsic mobilities, the activation energies, and total effective DOS for conduction band are determined with the effective field-effect mobility versus temperature plots and total DOS of trap states. Second the general formula for subthreshold swing S applicable to organic field-effect transistors is derived and the surface potentials are determined from the S determined from the transfer curves and the DOS for the trap states according to the general formula.

Original languageEnglish
Article number163307
JournalApplied Physics Letters
Volume92
Issue number16
DOIs
Publication statusPublished - May 1 2008

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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