An integrated micro multi-ion sensor using platinum-gate field-effect transistors

K. Tsukada, K. Miyahara, Y. Shibata, H. Miyagi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

An integrated micro multi-ion sensor was designed and fabricated for a high-performance ion sensor applicable to clinical analyses. Platinum gate ISFETs (ion-sensitive field effect transistors), which have a platinum block layer for protection from ion migration and dissolution and are compatible with MOSFETs, are used. The sensor chip consists of two kinds of ion sensors (K+ and Na+ ISFETs) and two CMOS unity-gain buffers. The output voltages are equal to the equivalent gate membrane potentials of the integrated ISFETs and show a wide linear dynamic range. The K+ and Na+ ISFETs show good chemical responses, including sensitivities, selectivities, and drifts, which are compatible with those of conventional ion-selective electrodes.

Original languageEnglish
Title of host publicationTransducers '91
PublisherPubl by IEEE
Pages218-221
Number of pages4
ISBN (Print)0879425857
Publication statusPublished - Dec 1 1991
Externally publishedYes
Event1991 International Conference on Solid-State Sensors and Actuators - San Francisco, CA, USA
Duration: Jun 24 1991Jun 28 1991

Publication series

NameTransducers '91

Other

Other1991 International Conference on Solid-State Sensors and Actuators
CitySan Francisco, CA, USA
Period6/24/916/28/91

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Tsukada, K., Miyahara, K., Shibata, Y., & Miyagi, H. (1991). An integrated micro multi-ion sensor using platinum-gate field-effect transistors. In Transducers '91 (pp. 218-221). (Transducers '91). Publ by IEEE.