TY - GEN
T1 - An integrated micro multi-ion sensor using platinum-gate field-effect transistors
AU - Tsukada, K.
AU - Miyahara, K.
AU - Shibata, Y.
AU - Miyagi, H.
PY - 1991/12/1
Y1 - 1991/12/1
N2 - An integrated micro multi-ion sensor was designed and fabricated for a high-performance ion sensor applicable to clinical analyses. Platinum gate ISFETs (ion-sensitive field effect transistors), which have a platinum block layer for protection from ion migration and dissolution and are compatible with MOSFETs, are used. The sensor chip consists of two kinds of ion sensors (K+ and Na+ ISFETs) and two CMOS unity-gain buffers. The output voltages are equal to the equivalent gate membrane potentials of the integrated ISFETs and show a wide linear dynamic range. The K+ and Na+ ISFETs show good chemical responses, including sensitivities, selectivities, and drifts, which are compatible with those of conventional ion-selective electrodes.
AB - An integrated micro multi-ion sensor was designed and fabricated for a high-performance ion sensor applicable to clinical analyses. Platinum gate ISFETs (ion-sensitive field effect transistors), which have a platinum block layer for protection from ion migration and dissolution and are compatible with MOSFETs, are used. The sensor chip consists of two kinds of ion sensors (K+ and Na+ ISFETs) and two CMOS unity-gain buffers. The output voltages are equal to the equivalent gate membrane potentials of the integrated ISFETs and show a wide linear dynamic range. The K+ and Na+ ISFETs show good chemical responses, including sensitivities, selectivities, and drifts, which are compatible with those of conventional ion-selective electrodes.
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M3 - Conference contribution
AN - SCOPUS:0026396276
SN - 0879425857
T3 - Transducers '91
SP - 218
EP - 221
BT - Transducers '91
PB - Publ by IEEE
T2 - 1991 International Conference on Solid-State Sensors and Actuators
Y2 - 24 June 1991 through 28 June 1991
ER -