An integrated atomic force microscopy/scanning tunneling spectroscopy microscope and its application for p-n junction observations

Kenji Yamazaki, Shigeru Nakajima

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We have developed an integrated atomic force microscopy (AFM)/scanning tunneling spectroscopy (STS) microscope that can simultaneously obtain, for the same area, a topographic image and current imaging tunneling spectroscopy (CITS) images derived from current-voltage (I-V) characteristics on insulator-mixed surfaces. The I-V characteristics and CITS images of p-n junctions are stable and clearly show the differences between p- and n+-regions, and thus these regions can easily be distinguished. The characteristics can be explained by theoretical energy-band analysis. Since the current decreases with time after HF cleaning, the current changes are also probably related to changes in native oxide thickness. Studies of impurity concentration distribution and oxide growth on silicon surfaces are found to be possible by integrated AFM/STS microscopy.

Original languageEnglish
Pages (from-to)3743-3747
Number of pages5
JournalJapanese Journal of Applied Physics
Volume33
Issue number6 S
DOIs
Publication statusPublished - Jun 1994

Keywords

  • AFM (atomic force microscopy)
  • AFM/STS
  • Impurity concentration
  • Native oxide
  • P-n junction
  • STS (scanning tunneling spectroscopy)
  • Silicon
  • Tunneling current

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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