Ambipolar operation of fullerene field-effect transistors by semiconductor/metal interface modification

Takao Nishikawa, Shin Ichiro Kobayashi, Tomoyuki Nakanowatari, Tadaoki Mitani, Tatsuya Shimoda, Yoshihiro Kubozono, Gakushi Yamamoto, Hisao Ishii, Michio Niwano, Yoshihiro Iwasa

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Abstract

We report an ambipolar operation in field-effect transistors of C60 and metallofullerene Dy@ C82 by modification of semiconductor/metal electrode interface with perfluoroalkylsilane (FAS) molecules. Kelvin probe experiments revealed that the work function of the gold surface modified with FAS molecules increased by 0.55 eV as compared to the untreated gold. Hole injection into fullerenes is qualitatively understood in terms of this work-function change induced by the FAS molecules. The present results indicate that the charge injection from electrodes to organic semiconductors can be controlled simply by modification of semiconductor/metal interface without changing materials themselves.

Original languageEnglish
Article number104509
JournalJournal of Applied Physics
Volume97
Issue number10
DOIs
Publication statusPublished - May 15 2005

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Nishikawa, T., Kobayashi, S. I., Nakanowatari, T., Mitani, T., Shimoda, T., Kubozono, Y., Yamamoto, G., Ishii, H., Niwano, M., & Iwasa, Y. (2005). Ambipolar operation of fullerene field-effect transistors by semiconductor/metal interface modification. Journal of Applied Physics, 97(10), [104509]. https://doi.org/10.1063/1.1903109