AlN epitaxial film with atomically flat surface for GHz-band saw devices

Kazuhiro Uehara, C. M. Yang, H. Nakamura, S. Kameda, H. Nakase, K. Tsubouchi

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We have successfully developed (00·1) AlN film with atomically flat surface on (00·1) sapphire substrate using metalorganic chemical vapor deposition (MO-CVD) method. The atomically flat surface of less than Ra=2Å, Ra means mean roughness measured by atomic force microscope(AFM), within the thickness of 1.7μm has been achieved, whose conditions are high substrate temperature of 1200°C, low pressure of 30Torr, low V-III ratio of 500 and the numerous flow rate of trimethylaluminum (TMA)-back-up H2 gas of 5.0slm. The temperature-coefficient-of-delay (TCD) of the fabricated surface-acoustic-wave (SAW) device on (00·1) AlN/(00·1)Al2O3 combination with atomically flat surface are found to be 44.5ppm/°C at kH=2.25 and 28.5ppm/°C at kH=3.32, where kH is the normalized thickness by wave number, k is wave number and H is AlN film thickness. These measured TCD are agreed with simulated curve. AlN/Al2O3 combination with atomically flat surface has a potential for zero-TCD at kH=4.5.

Original languageEnglish
Pages (from-to)135-138
Number of pages4
JournalUnknown Journal
Volume1
Publication statusPublished - 2002
Externally publishedYes

Fingerprint

Epitaxial films
Acoustic surface wave devices
Temperature
Metallorganic chemical vapor deposition
Substrates
Sapphire
Film thickness
Microscopes
Surface roughness
Flow rate
Gases

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Uehara, K., Yang, C. M., Nakamura, H., Kameda, S., Nakase, H., & Tsubouchi, K. (2002). AlN epitaxial film with atomically flat surface for GHz-band saw devices. Unknown Journal, 1, 135-138.

AlN epitaxial film with atomically flat surface for GHz-band saw devices. / Uehara, Kazuhiro; Yang, C. M.; Nakamura, H.; Kameda, S.; Nakase, H.; Tsubouchi, K.

In: Unknown Journal, Vol. 1, 2002, p. 135-138.

Research output: Contribution to journalArticle

Uehara, K, Yang, CM, Nakamura, H, Kameda, S, Nakase, H & Tsubouchi, K 2002, 'AlN epitaxial film with atomically flat surface for GHz-band saw devices', Unknown Journal, vol. 1, pp. 135-138.
Uehara K, Yang CM, Nakamura H, Kameda S, Nakase H, Tsubouchi K. AlN epitaxial film with atomically flat surface for GHz-band saw devices. Unknown Journal. 2002;1:135-138.
Uehara, Kazuhiro ; Yang, C. M. ; Nakamura, H. ; Kameda, S. ; Nakase, H. ; Tsubouchi, K. / AlN epitaxial film with atomically flat surface for GHz-band saw devices. In: Unknown Journal. 2002 ; Vol. 1. pp. 135-138.
@article{ecd7b50c03ca4854b7d7ee5a304be9a3,
title = "AlN epitaxial film with atomically flat surface for GHz-band saw devices",
abstract = "We have successfully developed (00·1) AlN film with atomically flat surface on (00·1) sapphire substrate using metalorganic chemical vapor deposition (MO-CVD) method. The atomically flat surface of less than Ra=2{\AA}, Ra means mean roughness measured by atomic force microscope(AFM), within the thickness of 1.7μm has been achieved, whose conditions are high substrate temperature of 1200°C, low pressure of 30Torr, low V-III ratio of 500 and the numerous flow rate of trimethylaluminum (TMA)-back-up H2 gas of 5.0slm. The temperature-coefficient-of-delay (TCD) of the fabricated surface-acoustic-wave (SAW) device on (00·1) AlN/(00·1)Al2O3 combination with atomically flat surface are found to be 44.5ppm/°C at kH=2.25 and 28.5ppm/°C at kH=3.32, where kH is the normalized thickness by wave number, k is wave number and H is AlN film thickness. These measured TCD are agreed with simulated curve. AlN/Al2O3 combination with atomically flat surface has a potential for zero-TCD at kH=4.5.",
author = "Kazuhiro Uehara and Yang, {C. M.} and H. Nakamura and S. Kameda and H. Nakase and K. Tsubouchi",
year = "2002",
language = "English",
volume = "1",
pages = "135--138",
journal = "[No source information available]",
issn = "0402-1215",

}

TY - JOUR

T1 - AlN epitaxial film with atomically flat surface for GHz-band saw devices

AU - Uehara, Kazuhiro

AU - Yang, C. M.

AU - Nakamura, H.

AU - Kameda, S.

AU - Nakase, H.

AU - Tsubouchi, K.

PY - 2002

Y1 - 2002

N2 - We have successfully developed (00·1) AlN film with atomically flat surface on (00·1) sapphire substrate using metalorganic chemical vapor deposition (MO-CVD) method. The atomically flat surface of less than Ra=2Å, Ra means mean roughness measured by atomic force microscope(AFM), within the thickness of 1.7μm has been achieved, whose conditions are high substrate temperature of 1200°C, low pressure of 30Torr, low V-III ratio of 500 and the numerous flow rate of trimethylaluminum (TMA)-back-up H2 gas of 5.0slm. The temperature-coefficient-of-delay (TCD) of the fabricated surface-acoustic-wave (SAW) device on (00·1) AlN/(00·1)Al2O3 combination with atomically flat surface are found to be 44.5ppm/°C at kH=2.25 and 28.5ppm/°C at kH=3.32, where kH is the normalized thickness by wave number, k is wave number and H is AlN film thickness. These measured TCD are agreed with simulated curve. AlN/Al2O3 combination with atomically flat surface has a potential for zero-TCD at kH=4.5.

AB - We have successfully developed (00·1) AlN film with atomically flat surface on (00·1) sapphire substrate using metalorganic chemical vapor deposition (MO-CVD) method. The atomically flat surface of less than Ra=2Å, Ra means mean roughness measured by atomic force microscope(AFM), within the thickness of 1.7μm has been achieved, whose conditions are high substrate temperature of 1200°C, low pressure of 30Torr, low V-III ratio of 500 and the numerous flow rate of trimethylaluminum (TMA)-back-up H2 gas of 5.0slm. The temperature-coefficient-of-delay (TCD) of the fabricated surface-acoustic-wave (SAW) device on (00·1) AlN/(00·1)Al2O3 combination with atomically flat surface are found to be 44.5ppm/°C at kH=2.25 and 28.5ppm/°C at kH=3.32, where kH is the normalized thickness by wave number, k is wave number and H is AlN film thickness. These measured TCD are agreed with simulated curve. AlN/Al2O3 combination with atomically flat surface has a potential for zero-TCD at kH=4.5.

UR - http://www.scopus.com/inward/record.url?scp=0036992729&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036992729&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0036992729

VL - 1

SP - 135

EP - 138

JO - [No source information available]

JF - [No source information available]

SN - 0402-1215

ER -