Air-assisted high-performance field-effect transistor with thin films of picene

Hideki Okamoto, Naoko Kawasaki, Yumiko Kaji, Yoshihiro Kubozono, Akihiko Fujiwara, Minoru Yamaji

Research output: Contribution to journalArticlepeer-review

194 Citations (Scopus)

Abstract

A field-effect transistor (FET) with thin films of picene has been fabricated on SiO2 gate dielectric. The FET showed p-channel enhancement-type FET characteristics with the field-effect mobility, μ, of 1.1 cm2 V-1 s-1 and the on-off ratio of >105. This excellent device performance was realized under atmospheric conditions. The μ increased with an increase in temperature, and the FET performance was improved by exposure to air or O2 for a long time. This result implies that this device is an air (O2)-assisted FET. The FET characteristics are discussed on the basis of structural topography and the energy diagram of picene thin films.

Original languageEnglish
Pages (from-to)10470-10471
Number of pages2
JournalJournal of the American Chemical Society
Volume130
Issue number32
DOIs
Publication statusPublished - Aug 13 2008

ASJC Scopus subject areas

  • Catalysis
  • Chemistry(all)
  • Biochemistry
  • Colloid and Surface Chemistry

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