Abstract
Phenacenes represent a class of simple hydrocarbons with appealing physical properties ranging from high charge mobility to superconductivity in combination with chemical robustness that are easily modified to serve as versatile building blocks for tailored structures. As a promising candidate for applications in organic devices, phenacenes are the focus of recent investigations. Thereby, the initial growth behavior starting from a single molecule is controversial. Here, we address the growth of [7]phenacene and [9]phenacene on a Ag(111) surface, studying the details of the initial stage of growth by scanning tunneling microscopy. According to our results, a previously introduced model involving a coverage-dependent phase change with the out-of-plane rotation of molecules in the initial growth stage can be disregarded. Instead, we find evidence for the formation of a new phase on top of an in-plane wetting layer during the initial stage of growth.
| Original language | English |
|---|---|
| Pages (from-to) | 11390-11398 |
| Number of pages | 9 |
| Journal | Journal of Physical Chemistry C |
| Volume | 121 |
| Issue number | 21 |
| DOIs | |
| Publication status | Published - Jun 1 2017 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Energy(all)
- Surfaces, Coatings and Films
- Physical and Theoretical Chemistry
Cite this
Adsorption of Phenacenes on a Metallic Substrate : Revisited. / Chen, Song Wen; Sang, I. Chen; Okamoto, Hideki; Hoffmann, Germar.
In: Journal of Physical Chemistry C, Vol. 121, No. 21, 01.06.2017, p. 11390-11398.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Adsorption of Phenacenes on a Metallic Substrate
T2 - Revisited
AU - Chen, Song Wen
AU - Sang, I. Chen
AU - Okamoto, Hideki
AU - Hoffmann, Germar
PY - 2017/6/1
Y1 - 2017/6/1
N2 - Phenacenes represent a class of simple hydrocarbons with appealing physical properties ranging from high charge mobility to superconductivity in combination with chemical robustness that are easily modified to serve as versatile building blocks for tailored structures. As a promising candidate for applications in organic devices, phenacenes are the focus of recent investigations. Thereby, the initial growth behavior starting from a single molecule is controversial. Here, we address the growth of [7]phenacene and [9]phenacene on a Ag(111) surface, studying the details of the initial stage of growth by scanning tunneling microscopy. According to our results, a previously introduced model involving a coverage-dependent phase change with the out-of-plane rotation of molecules in the initial growth stage can be disregarded. Instead, we find evidence for the formation of a new phase on top of an in-plane wetting layer during the initial stage of growth.
AB - Phenacenes represent a class of simple hydrocarbons with appealing physical properties ranging from high charge mobility to superconductivity in combination with chemical robustness that are easily modified to serve as versatile building blocks for tailored structures. As a promising candidate for applications in organic devices, phenacenes are the focus of recent investigations. Thereby, the initial growth behavior starting from a single molecule is controversial. Here, we address the growth of [7]phenacene and [9]phenacene on a Ag(111) surface, studying the details of the initial stage of growth by scanning tunneling microscopy. According to our results, a previously introduced model involving a coverage-dependent phase change with the out-of-plane rotation of molecules in the initial growth stage can be disregarded. Instead, we find evidence for the formation of a new phase on top of an in-plane wetting layer during the initial stage of growth.
UR - http://www.scopus.com/inward/record.url?scp=85020634226&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85020634226&partnerID=8YFLogxK
U2 - 10.1021/acs.jpcc.7b01806
DO - 10.1021/acs.jpcc.7b01806
M3 - Article
VL - 121
SP - 11390
EP - 11398
JO - Journal of Physical Chemistry C
JF - Journal of Physical Chemistry C
SN - 1932-7447
IS - 21
ER -