Adsorption and thermal reaction of C 70 on Si(111)-(7 × 7) and Si(100)-(2 × 1) surfaces: Comparison with C 60

Takanori Wakita, Kazuyuki Sakamoto, Atsuo Kasuya, Yuichiro Nishina, Shozo Suto

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

We report here the measurements of vibrational excitation spectra and the temperature dependence of C 70 molecules adsorbed on Si(111)-(7 × 7) and Si(100)-(2 × 1) surfaces using high-resolution electron-energy-loss spectroscopy. It is found that a strong interaction of the C 70 molecule with the Si(100) surface is induced after annealing at 873 K and that the C 70 cage is easier to decompose on that surface. SiC films are formed at 1273 K and 1073 K on the Si(111)-(7 × 7) and Si(100)-(2 × 1) surfaces, respectively. Moreover, the formation temperature of 1073 K is lower by 50 K than that of the SiC film from C 60 on a Si(100)-(2 × 1) surface. We discuss the reactivity and the formation temperature of SiC films in terms of the interaction of C 70 with the substrates.

Original languageEnglish
Pages (from-to)653-656
Number of pages4
JournalApplied Surface Science
Volume144-145
DOIs
Publication statusPublished - Apr 1999

Keywords

  • Electron energy loss spectroscopy
  • Fullerenes
  • Silicon
  • Silicon carbide
  • Vibrations of adsorbed molecules

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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